A high‐speed, low‐power SOI CMOS circuit with variable threshold voltages

2001 ◽  
Vol 84 (5) ◽  
pp. 20-28
Author(s):  
Hisayuki Higuchi ◽  
Takahide Ikeda
1998 ◽  
Vol 33 (8) ◽  
pp. 1259-1261 ◽  
Author(s):  
R. Berger ◽  
W.G. Lyons ◽  
A. Soares

Author(s):  
Neelam Swami ◽  
Neha Arora ◽  
B. P. Singh ◽  
Kavita Mehta ◽  
Bhumika Patpatia

The present paper proposes a high speed and low power consumption by travelling novel XOR and XNOR gates. The present circuit consist optimized power intakeas well asdelay due to smallamount produced capacitance and power dissipation for low short circuit. Here we utilize 6 new hybrid 1 bit full adder circuitthat produces to and fro XOR/XNOR gates. Here the present circuit has its own advantages like rapidity, power consumption and delay in power product, dynamic capability and so on. Here we proposed signals like HSPICE, Cadence simulations for investigating the performance results which are based on 65-nm CMOS process technical models that indicate high speed and power against FA signals. So here we propose a novel new transistor sizing method that optimizes the PDP circuits. The present circuit investigates on various supply terms of variations like threshold voltages, size of transistors, input noise and output capacitance by utilizing numerical computation particle swam optimization algorithm for achieving desired value in optimum PDP with few iterations


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