P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One-Shot Monochromatic Photonic Cap

Donor And Acceptor ◽

Poster Paper ◽

P-29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States

SID Symposium Digest of Technical Papers ◽

10.1889/1.3069372 ◽

2008 ◽

Vol 39 (1) ◽

pp. 1277 ◽

Cited By ~ 6

Author(s):

Hsing-Hung Hsieh ◽

Toshio Kamiya ◽

Kenji Nomura ◽

Hideo Hosono ◽

Chung-Chih Wu

Keyword(s):

Thin Film ◽

Density Of States ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Enhanced Phase Stability and Carrier Suppression of Ternary Cation-Based Amorphous Oxide Semiconductor Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2021-01511999mtgabs ◽

2021 ◽

Vol MA2021-01 (51) ◽

pp. 1999-1999

Author(s):

Mingyuan Liu ◽

Han Wook Song ◽

Sunghwan Lee

Keyword(s):

Thin Film ◽

Phase Stability ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

(Invited) Channel Width and Channel Length Dependencies in Amorphous-Oxide-Semiconductor Thin-Film Transistors: From a Device Structure Perspective

ECS Transactions ◽

10.1149/05008.0151ecst ◽

2013 ◽

Vol 50 (8) ◽

pp. 151-159 ◽

Cited By ~ 4

Author(s):

M. Mativenga ◽

J. K. Um ◽

R. Mruthyunjaya ◽

J. H. Chang ◽

G. N. Heiler ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Channel Length ◽

Channel Width ◽

Oxide Semiconductor ◽

Device Structure ◽

Amorphous Oxide ◽

Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

AIP Advances ◽

10.1063/1.4742853 ◽

2012 ◽

Vol 2 (3) ◽

pp. 032129 ◽

Cited By ~ 9

Author(s):

Mallory Mativenga ◽

Tae-Ha Hwang ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Semiconductor Thin Film ◽

Bottom Gate

15.1: Invited Paper: Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications

SID Symposium Digest of Technical Papers ◽

10.1889/1.3256701 ◽

2009 ◽

Vol 40 (1) ◽

pp. 181 ◽

Cited By ~ 13

Author(s):

John F. Wager

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors

10.1116/1.3609254 ◽

2011 ◽

Vol 29 (4) ◽

pp. 04D115 ◽

Cited By ~ 11

Author(s):

T. Waggoner ◽

J. Triska ◽

K. Hoshino ◽

J. F. Wager ◽

J. F. Conley

Keyword(s):

Thin Film ◽

Aluminum Oxide ◽

Zirconium Oxide ◽

Thin Film Transistors ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

The Characteristics of Amorphous-Oxide-Semiconductor Thin-Film-Transistors According to the Active-Layer Structure

Journal of the Korea Academia-Industrial cooperation Society ◽

10.5762/kais.2009.10.7.1489 ◽

2009 ◽

Vol 10 (7) ◽

pp. 1489-1496

Author(s):

Ho-Nyeon Lee

Keyword(s):

Thin Film ◽

Active Layer ◽

Thin Film Transistors ◽

Layer Structure ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

10.1117/12.2041028 ◽

2014 ◽

Cited By ~ 2

Author(s):

Robert Alston ◽

Shanthi Iyer ◽

Tanina Bradley ◽

Jay Lewis ◽

Garry Cunningham ◽

...

Keyword(s):

Thin Film ◽

Low Temperatures ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Flexible Electronic ◽

Deposition Parameters ◽

Resistive Switching in Zinc-Tin-Oxide and Atomic Layer Deposition of Nanolaminates for Amorphous Oxide Semiconductor Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2012-02/41/3009 ◽

2012 ◽

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Tin Oxide ◽

Thin Film Transistors ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Zinc Tin Oxide ◽

Channel Width and Channel Length Dependencies in Amorphous-Oxide-Semiconductor Thin-Film Transistors: From a Device Structure Perspective

ECS Meeting Abstracts ◽

10.1149/ma2012-02/42/3087 ◽

2012 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Channel Length ◽

Channel Width ◽

Oxide Semiconductor ◽

Device Structure ◽

Amorphous Oxide ◽