Preparation of cross-sectional specimens of ceramic thermal barrier coatings for transmission electron microscopy

1990 ◽  
Vol 14 (4) ◽  
pp. 307-312 ◽  
Author(s):  
O. Unal ◽  
A. H. Heuer ◽  
T. E. Mitchell
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.


Author(s):  
F. Shaapur

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.


Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.


1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.


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