Topographic characterization of (Zr, Mn) co‐doped bismuth ferrite thin film surfaces

Author(s):  
Ştefan Ţălu ◽  
Arumugasamy Sathiya Priya ◽  
Deivasigamani Geetha
Keyword(s):  
Author(s):  
C. Indira Priyadharsini ◽  
A. Prakasam ◽  
P.M. Anbarasan

Investigation of the I-V characteristics of the DSSC based on interconnected with cobalt-doped SnO2 nanoparticles covered with a nano-scale thin layer which was absorbed by natural dyes are described. The presence of co-doped SnO2 has been confirmed by its characteristic XRD pattern and the shape of the particle is confirmed by SEM. The thickness of the protective layer can be conveniently controlled by the mole value of co-doped SnO2 used in the preparation of the thin film and the optimum conditions for best performance of the DSSC are presented together with possible explanation for the variations observed. An optimum light-to-electricity conversion efficiency of 0.37 % in the presence of a layer of co-doped SnO2 has been obtained which enhancement over the cell prepared with other natural dyes. The characterization of the sample using different techniques was explained (change the sentence).


2017 ◽  
Vol 28 (7) ◽  
pp. 5609-5614 ◽  
Author(s):  
K. T. Liu ◽  
J. Li ◽  
J. B. Xu ◽  
F. L. Xu ◽  
L. Wang ◽  
...  

2003 ◽  
Vol 55 (1) ◽  
pp. 923-931 ◽  
Author(s):  
Hyun Suk Kim ◽  
Il Doo Kim ◽  
Mi Hwa Lim ◽  
Chi Heon Lee ◽  
Myung Sun Kim ◽  
...  

2010 ◽  
Vol 152-153 ◽  
pp. 813-816
Author(s):  
Ying Xu ◽  
Wang Juan ◽  
Yu Bo Dou

Al-N codoped ZnO thin films were prepared by sol-gel method, which microstructure were characterized by AFM and XPS, on the basis of the result, doping mechanism of Al-N co-doped thin film is: the formation of the first occurrence of Al was replacing doping system of Zn, and it is conducive for N element in the system to the solution along with the increasing of Al doping concentration.


2020 ◽  
Vol 33 (12) ◽  
pp. 3687-3693
Author(s):  
Yu-Qi Zhou ◽  
Hong-Li Suo ◽  
Ya Wang ◽  
Kausar Shaheen ◽  
Min Liu ◽  
...  

2015 ◽  
Vol 14 (05n06) ◽  
pp. 1550024
Author(s):  
M. Santhiya ◽  
K. S. Pugazhvadivu ◽  
K. Tamilarasan

This paper presents the growth of bismuth ferrite ( Bi 2 Fe 4 O 9) thin film by radio frequency magnetron reactive sputtering on p- Si (100) substrate and the characterization of the grown thin film. The deposited thin film is characterized by X-ray diffraction (XRD), field emission scanning electron micrograph (FESEM), energy dispersive X-ray analysis (EDAX), dielectric measurements and vibrating sample magnetometer (VSM) analysis. The XRD study reveals the orthorhombic structure of the crystallites and the particle size is calculated as 45 nm. The FESEM result confirms that the film has smooth surface and uniform distribution of nanoclusters. The percentage of chemical compositions of the film is confirmed by EDAX measurement. The dielectric behavior of the film is examined in terms of the dielectric constant and the dielectric loss as a function of frequency. The magnetic behavior of the film is measured using VSM with the applied magnetic field of about 1 Tesla and the result shows the ferromagnetic behavior of the sample at room temperature.


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