Impact of high-κgate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate-all-around nanowire transistor

Author(s):  
Saeed Uz Zaman Khan ◽  
Md. Shafayat Hossain ◽  
Fahim Ur Rahman ◽  
Rifat Zaman ◽  
Md. Obaidul Hossen ◽  
...  
2021 ◽  
Vol 314 ◽  
pp. 119-126
Author(s):  
Yusuke Oniki ◽  
Lars Åke Ragnarsson ◽  
Hideaki Iino ◽  
Daire Cott ◽  
Boon Teik Chan ◽  
...  

This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold voltage have been developed. The challenges of long channel device integration are also discussed.


Author(s):  
Mahfuzul Islam ◽  
Hidetoshi Onodera

AbstractCross-layer resiliency has become a critical deciding factor for any successful product. This chapter focuses on monitor circuits that are essential in realizing the cross-layer resiliency. The role of monitor circuits is to establish a bridge between the hardware and other layers by providing information about the devices and the operating environment in run-time. This chapter explores delay-based monitor circuits for design automation with the existing cell-based design methodology. The chapter discusses several design techniques to monitor parameters of threshold voltage, temperature, leakage current, critical delay, and aging. The chapter then demonstrates a reconfigurable architecture to monitor multiple parameters with small area footprint. Finally, an extraction methodology of physical parameters is discussed for model-hardware correlation. Utilizing the cell-based design flow, delay-based monitors can be placed inside the target digital circuit and thus a better correlation between monitor and target circuit behavior can be realized.


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