scholarly journals In situ needle deflection technique using a steerable introducer for site‐selective radiofrequency transseptal puncture

2019 ◽  
Vol 35 (3) ◽  
pp. 565-567
Author(s):  
Taihei Itoh ◽  
Masaomi Kimura ◽  
Yuji Ishida ◽  
Hirofumi Tomita
2007 ◽  
Vol 601 (4) ◽  
pp. 1108-1117 ◽  
Author(s):  
B. Tränkenschuh ◽  
C. Papp ◽  
T. Fuhrmann ◽  
R. Denecke ◽  
H.-P. Steinrück

2017 ◽  
Vol 19 (12) ◽  
pp. 3099-3102 ◽  
Author(s):  
Masanori Yanagi ◽  
Ayumi Imayoshi ◽  
Yoshihiro Ueda ◽  
Takumi Furuta ◽  
Takeo Kawabata

2017 ◽  
Vol 8 (11) ◽  
pp. 1702514 ◽  
Author(s):  
Aram Choi ◽  
Jungwoo Lim ◽  
Hyung-Jin Kim ◽  
Sung Chul Jung ◽  
Hyung-Woo Lim ◽  
...  

2000 ◽  
Vol 639 ◽  
Author(s):  
Andrea M. Mitofsky ◽  
George C. Papen ◽  
Stephen G. Bishop ◽  
Dong-Seon Lee ◽  
Andrew J. Steckl

ABSTRACTSite-selective photolumiescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540nm 41/32 → 4I1/52 Er3+ transition in in-situ-doped GaN:Er which have detected nine differenct Er3+ sites and associated PL spectra. Three distinct Er3+ sites are identified in the in-situ-doped samples. For the in-situ-doped samples, the concentration of the various Er+3 sites are comparable while for the ion-implanted sample, the concertration of one Er3+ site was higher than the concentration of the other sites. In-situ-doped samples grown with different Ex-cell temperatures were considered, and the width of the PLE spectrum appears to be a function of the Er-cell temperature.


Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 957 ◽  
Author(s):  
Guillem Domènech-Gil ◽  
Lukas Hrachowina ◽  
Antonio Pardo ◽  
Michael S. Seifner ◽  
Isabel Gràcia ◽  
...  

A new method for the site-selective synthesis of nanowires has been developed to enable the material growth with specific morphology and different compositions on one single chip. Based on a modification of the chemical vapor deposition method, the growth of nanowires on top of micromembranes can be easily tuned and represents a simple and adjustable fabrication process for the direct integration of different nanowire-based resistive multifunctional devices. This proof-of-concept is exemplified by the deposition of SnO2, WO3 and Ge nanowires on the membranes of one single chip and their gas sensing responses towards different concentrations of CO, NO2 and humidity diluted in synthetic air are evaluated. The principal component analysis of the collected data allows gas identification and, thus, the system is suitable for environmental monitoring.


2019 ◽  
Vol 55 (99) ◽  
pp. 14926-14929
Author(s):  
Sangeeta Parmar ◽  
Sharad P. Pawar ◽  
Ramkumar Iyer ◽  
Dimpy Kalia

We report a technically simple approach for rapid, high-yielding and site-selective aldehyde-mediated bioconjugation for protein labelling and cellular applications.


2006 ◽  
Vol 124 (7) ◽  
pp. 074712 ◽  
Author(s):  
B. Tränkenschuh ◽  
N. Fritsche ◽  
T. Fuhrmann ◽  
C. Papp ◽  
J. F. Zhu ◽  
...  

Science ◽  
2012 ◽  
Vol 336 (6077) ◽  
pp. 61-64 ◽  
Author(s):  
Jong Min Yuk ◽  
Jungwon Park ◽  
Peter Ercius ◽  
Kwanpyo Kim ◽  
Daniel J. Hellebusch ◽  
...  

We introduce a new type of liquid cell for in situ transmission electron microscopy (TEM) based on entrapment of a liquid film between layers of graphene. The graphene liquid cell facilitates atomic-level resolution imaging while sustaining the most realistic liquid conditions achievable under electron-beam radiation. We employ this cell to explore the mechanism of colloidal platinum nanocrystal growth. Direct atomic-resolution imaging allows us to visualize critical steps in the process, including site-selective coalescence, structural reshaping after coalescence, and surface faceting.


2008 ◽  
Vol 1111 ◽  
Author(s):  
Nate Woodward ◽  
Naveen Jha ◽  
Eric Readinger ◽  
Grace Metcalfe ◽  
Michael Wraback ◽  
...  

AbstractDue to its favorable electronic and thermal properties GaN has been considered as a rare-earth host material for solid state amplifier and laser applications. To this end, we performed spatially resolved combined excitation emission spectroscopy (CEES) on Nd ions which were in-situ-doped into GaN epitaxial films grown by plasma assisted molecular beam epitaxy (PA-MBE) on c-plane sapphire substrate. For a wide range of concentration (up to 8at%) we find in the emission a dominant incorporation site, which can be identified with good certainty as a substitutional ‘Ga’ site. Energy levels and electron-phonon coupling to a localized mode can be identified. For the majority site, confocal spectral imaging under selective excitation show changes in emission intensity, excitation and emission wavelength on a submicron length scale suggesting spatial inhomogeneities in terms of Nd3+ ion concentration.


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