Isoindigo (IID)‐Based Semiconductor with F⋯S Interaction Locked Conformation for High‐Performance Ambipolar Bottom‐Gate Top‐Contact Field‐Effect Transistors

2020 ◽  
Vol 221 (18) ◽  
pp. 2000189
Author(s):  
Xiaolan Qiao ◽  
Qibing Wei ◽  
Hongzhuo Wu ◽  
Hongxiang Li
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Top Contact ◽  
Contact Field ◽  
Bottom Gate

A novel method for photolithographic polymer shadow masking: toward high-resolution high-performance top-contact organic field effect transistors

2014 ◽  
Vol 50 (61) ◽  
pp. 8328-8330 ◽  
Author(s):  
Deyang Ji ◽  
Longfeng Jiang ◽  
Lang Jiang ◽  
Xiaolong Fu ◽  
Huanli Dong ◽  
...  
Keyword(s):  
High Resolution ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Novel Method ◽  
Top Contact

The present work shows a novel method to prepare polymer-based masks called photolithographic polymer shadow masking and its application in the process of fabricating top-contact high-resolution OFETs.

scholarly journals High-Performance Flexible Bottom-Gate Organic Field-Effect Transistors with Gravure Printed Thin Organic Dielectric

2014 ◽  
Vol 1 (3) ◽  
pp. 1300123 ◽  
Author(s):  
Nikolay L. Vaklev ◽  
Robert Müller ◽  
Beinn V. O. Muir ◽  
David T. James ◽  
Roger Pretot ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Dielectric ◽  
Bottom Gate

scholarly journals Vinylene and benzo[c][1,2,5]thiadiazole: effect of the π-spacer unit on the properties of bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing polymers for n-channel organic field-effect transistors

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 38919-38928
Author(s):  
Thu Trang Do ◽  
Basanagouda B. Patil ◽  
Samarendra P. Singh ◽  
Soniya D. Yambem ◽  
Krishna Feron ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Device Structure ◽  
Polymer Semiconductors ◽  
Top Contact ◽  
Bottom Gate

Bottom-gate-top-contact OFET device structure using PBIBDF-TVT and PBIBDF-TBT based polymer semiconductors.

Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics

2019 ◽  
Vol 7 (14) ◽  
pp. 4004-4012 ◽  
Author(s):  
Fan Zhang ◽  
Huaye Zhang ◽  
Lijie Zhu ◽  
Liang Qin ◽  
Yue Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Dielectric Layers ◽  
Hybrid Perovskite ◽  
Bottom Gate

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Field-Effect Transistors: Highly π-Extended Copolymers with Diketopyrrolopyrrole Moieties for High-Performance Field-Effect Transistors (Adv. Mater. 34/2012)

2012 ◽  
Vol 24 (34) ◽  
pp. 4589-4589 ◽  
Author(s):  
Huajie Chen ◽  
Yunlong Guo ◽  
Gui Yu ◽  
Yan Zhao ◽  
Ji Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors
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