Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications

Effect Transistor ◽

Microwave Applications ◽

An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications

2007 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2007.4554632 ◽

2007 ◽

Author(s):

Ruchika Aggarwal ◽

Mridula Gupta ◽

R. S. Gupta ◽

Anju Agrawal

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Insulator ◽

High Power Microwave ◽

Effect Transistor ◽

Microwave Applications ◽

High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

IEEE Electron Device Letters ◽

10.1109/55.658598 ◽

1998 ◽

Vol 19 (2) ◽

pp. 44-46 ◽

Cited By ~ 81

Author(s):

Q. Chen ◽

J.W. Yang ◽

R. Gaska ◽

M.A. Khan ◽

M.S. Shur ◽

...

Keyword(s):

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

High Power Microwave ◽

Effect Transistor ◽

An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

Microelectronics Journal ◽

10.1016/j.mejo.2006.07.003 ◽

2006 ◽

Vol 37 (11) ◽

pp. 1339-1346 ◽

Cited By ~ 16

Author(s):

Sona P. Kumar ◽

Anju Agrawal ◽

Sneha Kabra ◽

Mridula Gupta ◽

R.S. Gupta

Keyword(s):

Velocity Field ◽

Field Dependence ◽

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

Microwave Frequency ◽

High Power Microwave ◽

Effect Transistor ◽

AlN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4481 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4481-4483 ◽

Cited By ~ 24

Author(s):

Dong-Hyun Cho ◽

Mitsuaki Shimizu ◽

Toshihide Ide ◽

Hideyuki Ookita ◽

Hajime Okumura

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Gate dielectric engineering of sub quarter micron AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high gain characteristics

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422371 ◽

2007 ◽

Author(s):

Ruchika Aggarwal ◽

Anju Agrawal ◽

Mridula Gupta ◽

R.S. Gupta

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

High Gain ◽

Metal Insulator ◽

GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.090204 ◽

2013 ◽

Vol 52 (9R) ◽

pp. 090204 ◽

Cited By ~ 10

Author(s):

Herwig Hahn ◽

Fouad Benkhelifa ◽

Oliver Ambacher ◽

Assadullah Alam ◽

Michael Heuken ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Enhancement Mode ◽

Effect Transistor ◽

Gan On Si

2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS) ◽

In situ capped GaN-based metal-insulator-semiconductor heterostructure field-effect transistor

10.1109/peds.2013.6527159 ◽

2013 ◽

Author(s):

Ping-Chuan Chang ◽

Kai-Hsuan Lee

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave

Acta Physica Sinica ◽

10.7498/aps.61.108501 ◽

2012 ◽

Vol 61 (10) ◽

pp. 108501

Author(s):

You Hai-Long ◽

Lan Jian-Chun ◽

Fan Ju-Ping ◽

Jia Xin-Zhang ◽

Zha Wei

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Power Microwave ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect ◽

AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

Applied Physics Letters ◽

10.1063/1.3651495 ◽

2011 ◽

Vol 99 (15) ◽

pp. 153505 ◽

Cited By ~ 3

Author(s):

K. H. Lee ◽

P. C. Chang ◽

S. J. Chang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Cap Layer ◽

2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting ◽

Metamaterial-enabled Reflectarray Antennas for High-power Microwave Applications

10.1109/ieeeconf35879.2020.9329645 ◽

2020 ◽

Author(s):

Sawyer D. Campbell ◽

Galestan Mackertich-Sengerdy ◽

J. Daniel Binion ◽

Ryan J. Chaky ◽

Ronald P. Jenkins ◽

...

Keyword(s):

High Power ◽

High Power Microwave ◽

Microwave Applications ◽