Inductively Coupled Plasma Source Using Internal Multiple U-Type Antenna for Ultra Large-Area Plasma Processing

2007 ◽  
Vol 4 (S1) ◽  
pp. S999-S1003 ◽  
Author(s):  
Jong Hyeuk Lim ◽  
Kyong Nam Kim ◽  
Geun Young Yeom
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Processing ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled

Low Inductance Antenna (LIA) plasma source and plasma-enhanced dual rotatable magnetron sputter assisted with LIA

2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Voltage ◽  
Polymer Surface ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Damage ◽  
Inductively Coupled ◽  
Temperature Deposition ◽  
Magnetron Sputter ◽  
Plasma Profile

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.

Model for a large area multi‐frequency multiplanar coil inductively coupled plasma source

1996 ◽  
Vol 14 (5) ◽  
pp. 2859-2870 ◽  
Author(s):  
Naoki Yamada ◽  
Peter L. G. Ventzek ◽  
H. Date ◽  
Y. Sakai ◽  
H. Tagashira
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled

scholarly journals Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source

1996 ◽  
Vol 421 ◽  
Author(s):  
C. Constantine ◽  
D. Johnson ◽  
C. Barratt ◽  
R. J. Shul ◽  
G. B. Mcclellan ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled ◽  
Semiconductor Etching ◽  
Deposition Processes ◽  
Gan Etching ◽  
Very High

AbstractInductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

Characteristics of Internal Inductively Coupled Plasma Source for Ultralarge-Area Plasma Processing

2010 ◽  
Vol 49 (3) ◽  
pp. 030213
Author(s):  
Jong Hyeuk Lim ◽  
Gwang Ho Gweon ◽  
Seung Pyo Hong ◽  
Kyong Nam Kim ◽  
Yi Yeon Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Processing ◽  
Plasma Source ◽  
Inductively Coupled

scholarly journals Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source

2001 ◽  
Vol 8 (4) ◽  
pp. 1384 ◽  
Author(s):  
S. S. Kim ◽  
S. Hamaguchi ◽  
N. S. Yoon ◽  
C. S. Chang ◽  
Y. D. Lee ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled
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