Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source
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AbstractInductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.
2015 ◽
Vol 2015
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pp. 000757-000760
2012 ◽
Vol 45
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pp. 475201
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1996 ◽
Vol 14
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pp. 2859-2870
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2008 ◽
Vol 202
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pp. 5242-5245
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1997 ◽
Vol 15
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pp. 983
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1993 ◽
Vol 32
(Part 2, No. 11A)
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pp. L1635-L1637
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