Reduction of the electrostatic coupling in a large-area internal inductively coupled plasma source using a multicusp magnetic field

2004 ◽  
Vol 85 (10) ◽  
pp. 1677-1679 ◽  
Author(s):  
Y. J. Lee ◽  
K. N. Kim ◽  
G. Y. Yeom ◽  
M. A. Lieberman
2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.


1996 ◽  
Vol 14 (5) ◽  
pp. 2859-2870 ◽  
Author(s):  
Naoki Yamada ◽  
Peter L. G. Ventzek ◽  
H. Date ◽  
Y. Sakai ◽  
H. Tagashira

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5242-5245 ◽  
Author(s):  
Kyong Nam Kim ◽  
Jong Hyeuk Lim ◽  
Jung Kyun Park ◽  
Geun Young Yeom

1996 ◽  
Vol 421 ◽  
Author(s):  
C. Constantine ◽  
D. Johnson ◽  
C. Barratt ◽  
R. J. Shul ◽  
G. B. Mcclellan ◽  
...  

AbstractInductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.


2013 ◽  
Vol 662 ◽  
pp. 812-818
Author(s):  
Dou Wei ◽  
Chao Bo Li ◽  
Xia Yang

2001 ◽  
Vol 8 (4) ◽  
pp. 1384 ◽  
Author(s):  
S. S. Kim ◽  
S. Hamaguchi ◽  
N. S. Yoon ◽  
C. S. Chang ◽  
Y. D. Lee ◽  
...  

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