Low Inductance Antenna (LIA) plasma source and plasma-enhanced dual rotatable magnetron sputter assisted with LIA

2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Voltage ◽  
Polymer Surface ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Damage ◽  
Inductively Coupled ◽  
Temperature Deposition ◽  
Magnetron Sputter ◽  
Plasma Profile

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.

Model for a large area multi‐frequency multiplanar coil inductively coupled plasma source

1996 ◽  
Vol 14 (5) ◽  
pp. 2859-2870 ◽  
Author(s):  
Naoki Yamada ◽  
Peter L. G. Ventzek ◽  
H. Date ◽  
Y. Sakai ◽  
H. Tagashira
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled

scholarly journals Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source

1996 ◽  
Vol 421 ◽  
Author(s):  
C. Constantine ◽  
D. Johnson ◽  
C. Barratt ◽  
R. J. Shul ◽  
G. B. Mcclellan ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled ◽  
Semiconductor Etching ◽  
Deposition Processes ◽  
Gan Etching ◽  
Very High

AbstractInductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

scholarly journals Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source

2001 ◽  
Vol 8 (4) ◽  
pp. 1384 ◽  
Author(s):  
S. S. Kim ◽  
S. Hamaguchi ◽  
N. S. Yoon ◽  
C. S. Chang ◽  
Y. D. Lee ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

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