Epitaxy-free monocrystalline silicon thin films: Identifying the mechanisms behind lifetime degradation upon multiple high-temperature annealings

2010 ◽  
Vol 208 (3) ◽  
pp. 600-603 ◽  
Author(s):  
Valérie Depauw ◽  
Eddy Simoen ◽  
Ivan Gordon ◽  
Jef Poortmans
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Monocrystalline Silicon ◽  
Silicon Thin Films

Epitaxy-Like Growth of Polycrystalline Silicon on the Seed Crystallites Grown on Glass

1996 ◽  
Vol 452 ◽  
Author(s):  
Y. Miyamoto ◽  
A. Miida ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
Surface Reaction ◽  
Preferential Orientation ◽  
Silicon Thin Films

AbstractPolycrystalline silicon thin films were grown on glass by two-steps, i.e., deposition of seeds on glass (1) and growth epitaxy-like on the seeds (2). For the growth of seeds, the surface reaction was intentionally enhanced by impingment of atomic hydrogen at rather high temperature (450 °C). Strongly textured polycrystalline Si exhibiting (220) preferential orientation was grown epitaxy-like on the seeds.

Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

1996 ◽  
Vol 441 ◽  
Author(s):  
Chia-Liang Yu ◽  
Paul A. Flinn ◽  
Seok-Hee Lee ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Stress Relaxation ◽  
Deposition Temperature ◽  
Stress Generation ◽  
Deformation Model ◽  
Silicon Thin Films ◽  
Compressive Stresses ◽  
Polysilicon Films ◽  
Curvature Measurements

AbstractThe mechanisms of stress generation and stress relaxation of LPCVD silicon thin films were studied using high temperature wafer curvature measurements. The stresses generated during depositions are measured as functions of deposition temperature and microstructure. Amorphous silicon deposited with a compressive stress shows a large stress change toward tensile during crystallization. The stress relaxation of polysilicon films deposited with tensile stresses can be described by a deformation model from Ashby and Frost [1]. The polysilicon films deposited with compressive stresses have hydrogen incorporated during deposition and shows hydrogen evolution during thermal cycles.

Large-area monocrystalline silicon thin films by annealing of macroporous arrays: Understanding and tackling defects in the material

2009 ◽  
Vol 106 (3) ◽  
pp. 033516 ◽  
Author(s):  
Valérie Depauw ◽  
Ivan Gordon ◽  
Guy Beaucarne ◽  
Jef Poortmans ◽  
Robert Mertens ◽  
...  
Keyword(s):  
Thin Films ◽  
Monocrystalline Silicon ◽  
Large Area ◽  
Silicon Thin Films

Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial

2006 ◽  
Vol 88 (10) ◽  
pp. 101909 ◽  
Author(s):  
O. Marty ◽  
T. Nychyporuk ◽  
J. de la Torre ◽  
V. Lysenko ◽  
G. Bremond ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Monocrystalline Silicon ◽  
Silicon Thin Films ◽  
As Stress

Solid Silicon at the Melting Temperature is Crystalline

1983 ◽  
Vol 23 ◽  
Author(s):  
D. K. Biegelsen ◽  
R. J. Nemanich ◽  
L. E. Fennell ◽  
R. A. Street
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Energy Distribution ◽  
Equilibrium State ◽  
Melting Temperature ◽  
Strong Evidence ◽  
Equilibrium Phase ◽  
Amorphous Structure ◽  
Silicon Thin Films ◽  
High Temperature System

ABSTRACTRecently it has been proposed that solid silicon at the melting temperature is amorphous. There is no known case of a solid for which an amorphous structure is the equilibrium state. Silicon thin films on insulating substrates, when heated radiantly, melt inhomogeneously and provide an accessible high temperature system for a study of a solid coexisting with its melt. Using the intensity, energy distribution and polarization of Raman scattering from silicon lamellae, we have proved that the equilibrium phase is in fact crystalline. Furthermore, we give strong evidence that the solid regions have {100} texture at Tm.

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