Water content and high temperature influence on the oxidation behavior of manganese and silicon thin films on iron matrix

2015 ◽  
Vol 265 ◽  
pp. 145-153 ◽  
Author(s):  
Carina Hambrock ◽  
Andrei Ionut Mardare ◽  
Achim Walter Hassel
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Water Content ◽  
Oxidation Behavior ◽  
Temperature Influence ◽  
Iron Matrix ◽  
Silicon Thin Films

Epitaxy-Like Growth of Polycrystalline Silicon on the Seed Crystallites Grown on Glass

1996 ◽  
Vol 452 ◽  
Author(s):  
Y. Miyamoto ◽  
A. Miida ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
Surface Reaction ◽  
Preferential Orientation ◽  
Silicon Thin Films

AbstractPolycrystalline silicon thin films were grown on glass by two-steps, i.e., deposition of seeds on glass (1) and growth epitaxy-like on the seeds (2). For the growth of seeds, the surface reaction was intentionally enhanced by impingment of atomic hydrogen at rather high temperature (450 °C). Strongly textured polycrystalline Si exhibiting (220) preferential orientation was grown epitaxy-like on the seeds.

Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

1996 ◽  
Vol 441 ◽  
Author(s):  
Chia-Liang Yu ◽  
Paul A. Flinn ◽  
Seok-Hee Lee ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Stress Relaxation ◽  
Deposition Temperature ◽  
Stress Generation ◽  
Deformation Model ◽  
Silicon Thin Films ◽  
Compressive Stresses ◽  
Polysilicon Films ◽  
Curvature Measurements

AbstractThe mechanisms of stress generation and stress relaxation of LPCVD silicon thin films were studied using high temperature wafer curvature measurements. The stresses generated during depositions are measured as functions of deposition temperature and microstructure. Amorphous silicon deposited with a compressive stress shows a large stress change toward tensile during crystallization. The stress relaxation of polysilicon films deposited with tensile stresses can be described by a deformation model from Ashby and Frost [1]. The polysilicon films deposited with compressive stresses have hydrogen incorporated during deposition and shows hydrogen evolution during thermal cycles.

High temperature cyclic oxidation behavior of magnetron sputtered Ni–Al thin films on Ni- and Fe-based superalloys

2009 ◽  
Vol 114 (2-3) ◽  
pp. 629-635 ◽  
Author(s):  
R.A. Mahesh ◽  
R. Jayaganthan ◽  
S. Prakash ◽  
Vipin Chawla ◽  
Ramesh Chandra
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Cyclic Oxidation ◽  
Oxidation Behavior

Solid Silicon at the Melting Temperature is Crystalline

1983 ◽  
Vol 23 ◽  
Author(s):  
D. K. Biegelsen ◽  
R. J. Nemanich ◽  
L. E. Fennell ◽  
R. A. Street
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Energy Distribution ◽  
Equilibrium State ◽  
Melting Temperature ◽  
Strong Evidence ◽  
Equilibrium Phase ◽  
Amorphous Structure ◽  
Silicon Thin Films ◽  
High Temperature System

ABSTRACTRecently it has been proposed that solid silicon at the melting temperature is amorphous. There is no known case of a solid for which an amorphous structure is the equilibrium state. Silicon thin films on insulating substrates, when heated radiantly, melt inhomogeneously and provide an accessible high temperature system for a study of a solid coexisting with its melt. Using the intensity, energy distribution and polarization of Raman scattering from silicon lamellae, we have proved that the equilibrium phase is in fact crystalline. Furthermore, we give strong evidence that the solid regions have {100} texture at Tm.

Investigation on the oxidation behavior of AlCrVxN thin films by means of synchrotron radiation and influence on the high temperature friction

2018 ◽  
Vol 427 ◽  
pp. 511-521 ◽  
Author(s):  
Wolfgang Tillmann ◽  
David Kokalj ◽  
Dominic Stangier ◽  
Michael Paulus ◽  
Christian Sternemann ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Synchrotron Radiation ◽  
Oxidation Behavior

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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