In situ
SiN
x
gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si
2014 ◽
Vol 211
(4)
◽
pp. 775-778
◽
2018 ◽
Vol 65
(2)
◽
pp. 680-686
◽
Keyword(s):
2014 ◽
Vol 35
(1)
◽
pp. 138-140
◽
Keyword(s):
2013 ◽
Vol 34
(6)
◽
pp. 738-740
◽
Keyword(s):
MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio
2015 ◽
Vol 414
◽
pp. 237-242
◽
2017 ◽
Vol 38
(9)
◽
pp. 1298-1301
◽
Keyword(s):