A 800 V β‐Ga
2
O
3
Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm
−2
2019 ◽
Vol 216
(20)
◽
pp. 1900421
◽
Keyword(s):
2021 ◽
Vol 134
◽
pp. 106046
Keyword(s):
2020 ◽
Vol 21
(3)
◽
pp. 339-347
◽
1997 ◽
Vol 9
(8)
◽
pp. 1143-1145
◽
2010 ◽
Vol 49
(4)
◽
pp. 04DE16
◽
Keyword(s):
1996 ◽
Vol 35
(Part 1, No. 6A)
◽
pp. 3331-3333
◽