scholarly journals The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures

2020 ◽  
pp. 2000511
Author(s):  
Felix Winkler ◽  
Carsten Strobel ◽  
Christian Wenzel ◽  
Johann W. Bartha
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Implantation ◽  
Effect Transistor ◽  
Flexible Fabrication

SiGe Nanowire Field Effect Transistors

2008 ◽  
Vol 8 (1) ◽  
pp. 457-460 ◽  
Author(s):  
Cheng Qi ◽  
Yaswanth Rangineni ◽  
Gary Goncher ◽  
Raj Solanki ◽  
Kurt Langworthy ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Boron Doped ◽  
High K ◽  
Pt Electrodes ◽  
Effect Transistor

Si0.5Ge0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V−1s−1. Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V−1s−1.

Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

2016 ◽  
Vol 34 (6) ◽  
pp. 06KA03 ◽  
Author(s):  
Alessandra Leonhardt ◽  
Marcos Vinicius Puydinger dos Santos ◽  
José Alexandre Diniz ◽  
Leandro Tiago Manera ◽  
Lucas Petersen Barbosa Lima
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Viable Alternative ◽  
Ion Beam Lithography ◽  
Effect Transistor

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

AbstractWe report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation

1999 ◽  
Vol 38 (Part 1, No. 12B) ◽  
pp. 7222-7226 ◽  
Author(s):  
Hiroki Kondo ◽  
Kenta Izumikawa ◽  
Masakazu Sakurai ◽  
Shin-ichi Baba ◽  
Hirotaka Iwano ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Coulomb Blockade ◽  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nano Scale ◽  
Ion Beam Implantation
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