Structure and luminescence properties of InGaN/AlGaN multi‐quantum well microrods‐arrays structure

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300000739 ◽

1998 ◽

Vol 3 ◽

Cited By ~ 36

Author(s):

P. Kung ◽

A. Saxler ◽

D. Walker ◽

A. Rybaltowski ◽

Xiaolong Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Threshold Current ◽

Threshold Current Density ◽

Multi Quantum Well ◽

Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

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Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

AIP Advances ◽

10.1063/1.4918971 ◽

2015 ◽

Vol 5 (4) ◽

pp. 047132 ◽

Cited By ~ 4

Author(s):

Liefeng Feng ◽

Xiufang Yang ◽

Yang Li ◽

Ding Li ◽

Cunda Wang ◽

...

Keyword(s):

Quantum Well ◽

Band Gap ◽

Narrow Band ◽

Laser Diodes ◽

Lasing Threshold ◽

Competitive Behavior ◽

Quantum Well Laser ◽

Multi Quantum Well ◽

Voltage Jump

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Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300001319 ◽

1997 ◽

Vol 2 ◽

Cited By ~ 50

Author(s):

Shuji Nakamura

Keyword(s):

Quantum Well ◽

Carrier Density ◽

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Gain Coefficient ◽

Threshold Current ◽

Quantum Well Structure ◽

Multi Quantum Well ◽

Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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