The Dependence of Electrical and Optical Properties of RF Sputtered Amorphous Silicon–Carbon Alloy Thin Films on Substrate Temperature and Hydrogen Flow Rate

1991 ◽  
Vol 126 (1) ◽  
pp. 143-150 ◽  
Author(s):  
L. Magafas ◽  
N. Georgoulas ◽  
D. Girginoudi ◽  
A. Thanailakis
Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 145-150 ◽  
Author(s):  
Zhenfei Luo ◽  
Zhiming Wu ◽  
Xiangdong Xu ◽  
Mingjun Du ◽  
Tao Wang ◽  
...  

2016 ◽  
Vol 34 (6) ◽  
pp. 061307
Author(s):  
Panagiotis Dimitrakellis ◽  
Eleftherios Amanatides ◽  
Dimitrios Mataras ◽  
Angelos G. Kalampounias ◽  
Nikolaos Spiliopoulos ◽  
...  

1990 ◽  
Vol 192 ◽  
Author(s):  
L. Magafas ◽  
D. Girginoudi ◽  
N. Georgoulas ◽  
A. Thanailakis

ABSTRACTThe dependence of chemical composition, structure and optoelectronic properties of sputtered a-SiC:H thin films on substrate temperature, Ts, and hydrogen flow rate has been studied. The films are amorphous for the growth conditions used in this work. The chemical composition of the alloys is very little influenced by the Ts, whereas the hydrogen content and the optical absorption coefficient depends strongly on Ts and hydrogen flow rate.


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