Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy

Luminescence spectra of Light Emitting Diodes (LEDs) with Multiple Quantum Wells (MQWs) were studied at currents J = 0.15 μA - 150 mA. A high quantum efficiency at low J is caused by a low probability of the tunnel current J (which is maximum at Jm ≈ 0.5-1.0 mA). J(V) curves were measured in the range J= 10−12-10−1 A; at J > 10−3A they may be approximated by a sum of four parts: V= φk+ mkT·[ln(J/J0)+(J/J1)0.5] + J·Rs. The part V ~ (J/J1)0.5is the evidence of a double-injection into i-layers near MQWs. Their presence is confirmed by capacitance measurements. An overflow of carriers through the MQW causes a lower quantum efficiency at high J. A model of a 2D-density of states with exponential tails fits the spectra. The value of T in the active layer was estimated. A new band was detected at high J; it can be caused by non-uniformity of In content in MQWs.

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High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate

ACS Photonics ◽

10.1021/acsphotonics.8b00283 ◽

2018 ◽

Vol 5 (5) ◽

pp. 1903-1906 ◽

Cited By ~ 14

Author(s):

Jianguo Zhao ◽

Xiong Zhang ◽

Jiaqi He ◽

Shuai Chen ◽

Zili Wu ◽

...

Keyword(s):

Quantum Wells ◽

Quantum Efficiency ◽

Sapphire Substrate ◽

Internal Quantum Efficiency ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Measurements of the absolute external luminescence quantum efficiency in ZnSe/ZnMgSSe multiple quantum wells as a function of temperature

Journal of Applied Physics ◽

10.1063/1.368982 ◽

1998 ◽

Vol 84 (12) ◽

pp. 6871-6876 ◽

Cited By ~ 18

Author(s):

R. Westphäling ◽

P. Ullrich ◽

J. Hoffmann ◽

H. Kalt ◽

C. Klingshirn ◽

...

Keyword(s):

Quantum Wells ◽

Quantum Efficiency ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

The Absolute

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Carrier localization effect in polarized InGaN multiple quantum wells

physica status solidi (c) ◽

10.1002/pssc.200461428 ◽

2005 ◽

Vol 2 (7) ◽

pp. 2753-2756 ◽

Cited By ~ 2

Author(s):

A. ?ukauskas ◽

K. Kazlauskas ◽

G. Tamulaitis ◽

J. Mickevi?ius ◽

S. Jur??nas ◽

...

Keyword(s):

Quantum Wells ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Carrier Localization ◽

Localization Effect

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Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2mixture gas

Applied Physics Express ◽

10.7567/apex.10.061004 ◽

2017 ◽

Vol 10 (6) ◽

pp. 061004 ◽

Cited By ~ 2

Author(s):

Yadan Zhu ◽

Taiping Lu ◽

Xiaorun Zhou ◽

Guangzhou Zhao ◽

Hailiang Dong ◽

...

Keyword(s):

Low Temperature ◽

Quantum Wells ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Efficiency Improvement ◽

Cap Layer ◽

Photoluminescence Efficiency

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Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

MRS Proceedings ◽

10.1557/proc-379-115 ◽

1995 ◽

Vol 379 ◽

Author(s):

K. Rammohan ◽

D.H. Rich ◽

A. Larsson

Keyword(s):

Activation Energy ◽

Quantum Wells ◽

Temperature Dependence ◽

Spatial Variations ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Misfit Dislocations ◽

Nonradiative Recombination ◽

Intensity Dependence ◽

Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

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