Carbon doping of cubic GaN under gallium-rich growth conditions

2003 ◽  
Vol 0 (7) ◽  
pp. 2537-2540 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Growth Conditions ◽  
Carbon Doping ◽  
Cubic Gan

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

1998 ◽  
Vol 264-268 ◽  
pp. 1173-1176 ◽  
Author(s):  
B. Schöttker ◽  
J. Kühler ◽  
Donat J. As ◽  
D. Schikora ◽  
K. Lischka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Accurate Method ◽  
Growth Conditions ◽  
Cubic Gan

Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

2000 ◽  
Vol 212 (3-4) ◽  
pp. 397-401 ◽  
Author(s):  
X.L Sun ◽  
Hui Yang ◽  
Y.T Wang ◽  
L.X Zheng ◽  
D.P Xu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Hexagonal Phase ◽  
Growth Conditions ◽  
Layer Growth ◽  
Phase Content ◽  
Cubic Gan

OPTICAL PROPERTIES OF GaN GROWN ON Si (111) SUBSTRATES BY MOCVD

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2610-2615 ◽  
Author(s):  
B. S. ZHANG ◽  
J. F. WANG ◽  
Y. WANG ◽  
J. J. ZHU ◽  
H. YANG
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Peak Intensity ◽  
Local Quantum ◽  
Cubic Gan

GaN epilayers were grown on Si (111) substrates by MOCVD. The optical properties of the samples under different growth conditions were characterized. The abnormal peaks of excitonic emissions related to cubic- GaN were observed on the samples under improper growth conditions based on the LT PL measurements. Also the peak intensity is much higher than that of hexagonal- GaN . The higher intensity of exciton peaks is attributed to the local quantum well formed between the hexagonal- and cubic- GaN . No exciton peaks of cubic- GaN were found on the sample using the optimal growth conditions.

Carbon doping of non-polar cubic GaN by CBr4

2009 ◽  
Vol 311 (7) ◽  
pp. 2039-2041 ◽  
Author(s):  
D.J. As ◽  
E. Tschumak ◽  
H. Pöttgen ◽  
O. Kasdorf ◽  
J.W. Gerlach ◽  
...  
Keyword(s):  
Carbon Doping ◽  
Cubic Gan

Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 1489-1492 ◽  
Author(s):  
Donat J. As ◽  
S. Potthast ◽  
J. Schörmann ◽  
S.F. Li ◽  
K. Lischka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Group Iii Nitrides ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
Free Standing ◽  
X Ray ◽  
Group Iii ◽  
Cubic Gan

Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers were grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiC substrates. The influence of the surface roughness of the 3C-SiC substrates and the influence of metal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist, when a one monolayer Ga coverage is formed at the growing surface. The improvement of the structural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates is demonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin, and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-ray diffraction, respectively.

Near band-edge optical properties of cubic GaN with and without carbon doping

2004 ◽  
Vol 35 (1) ◽  
pp. 73-77 ◽  
Author(s):  
J.R.L. Fernandez ◽  
F. Cerdeira ◽  
E.A. Meneses ◽  
J.A.N.T. Soares ◽  
O.C. Noriega ◽  
...  
Keyword(s):  
Optical Properties ◽  
Carbon Doping ◽  
Band Edge ◽  
Near Band Edge ◽  
Cubic Gan

Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
H. Tsuchiya ◽  
K. Sunaba ◽  
S. Yonemura ◽  
T. Suemasu ◽  
F. Hasegawa
Keyword(s):  
Vapor Phase ◽  
Surface Preparation ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Condition Dependence ◽  
X Ray Diffraction ◽  
Cubic Gan ◽  
The Will

ABSTRACTGaN buffer layers and thick GaN layers were grown on (001) GaAs substrates by hydride vapor phase epitaxy. The ratio of cubic to hexagonal components in the grown layer was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) plane and hexagonal (1011) planes measured by w scan. The optimum growth conditions were thermal cleaning at 600°C, growth temperature of 500°C and thickness of 30 nm for the buffer layer, and the Will ratio of 300 for thick GaN growth at 800°C. Cubic component in the layer grown with those conditions was more than 85% and strong cubic photoluminescence emission was observed at 377 nm (3.28 eV).

Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence

2020 ◽  
Vol 31 (17) ◽  
pp. 14336-14344
Author(s):  
Ruby Khan ◽  
Aman Arora ◽  
Anubha Jain ◽  
Brajesh S. Yadav ◽  
Jaya Lohani ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Carbon Doping ◽  
Yellow Luminescence

V - III ratio effect on Cubic GaN Grown by RF Plasma Assisted Gas Source MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Li-Wei Sung ◽  
Hao-Hsiung Lin ◽  
Chih-Ta Chia
Keyword(s):  
Optimal Growth ◽  
Growth Conditions ◽  
Optical Quality ◽  
Rf Plasma ◽  
Stable Regime ◽  
Gas Source ◽  
Cubic Gan ◽  
Gas Source Mbe ◽  
N Flux

AbstractWe report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate Ga stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

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