Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 1489-1492 ◽  
Author(s):  
Donat J. As ◽  
S. Potthast ◽  
J. Schörmann ◽  
S.F. Li ◽  
K. Lischka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Group Iii Nitrides ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
Free Standing ◽  
X Ray ◽  
Group Iii ◽  
Cubic Gan

Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers were grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiC substrates. The influence of the surface roughness of the 3C-SiC substrates and the influence of metal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist, when a one monolayer Ga coverage is formed at the growing surface. The improvement of the structural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates is demonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin, and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-ray diffraction, respectively.

Growth of Nonpolar (1100) Films and Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

2004 ◽  
Vol 831 ◽  
Author(s):  
Oliver Brandt ◽  
Yue Jun Sun ◽  
Klaus H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
High Energy ◽  
Growth Direction ◽  
Desorption Kinetics ◽  
Multiple Quantum ◽  
Kinetics Of

ABSTRACTWe discuss the growth of M-plane GaN films and (In, Ga)N/GaN multiple quantum well (MQW) structures on LiAlO2(100) substrates by plasma-assisted molecular beam epitaxy. The adsorption and desorption kinetics of Ga on M-plane GaN is studied by reflection high-energy electron diffraction, allowing us to identify the optimum growth conditions with regard to surface morphology. Furthermore, we investigate the compositional profile of M-plane (In, Ga)N/GaN MQWs grown under conditions resulting in comparatively abrupt interfaces. The results demonstrate that significant In surface segregation occurs for the case of M-plane (In, Ga)N. The dependence of the transition energies of the M-plane MQWs on the actual well thickness reveals, however, that the structures are indeed free of electrostatic fields along the growth direction.

Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
F. G. Johnson ◽  
G. W. Wicks ◽  
R. E. Viturro ◽  
R. Laforce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Group V ◽  
X Ray

ABSTRACTWe report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the group V fluxes with the cracker needle valves, arsenide-phosphide heterostructures were successfully grown with virtually no group V intermixing between layers. For comparison, similar heterostructure samples were grown using only the mechanical shutters to switch between group V fluxes, and the resulting layers were severely intermixed. The amount of group V intermixing was shown to be independent of whether As2 or As4 fluxes were used to grow the layers. A GaAs/Ga0.5In0.5P multiple quantum well sample was also grown using the valved crackers. Photoluminescence peaks were clearly observed from 40 Å, 80 Å, and 300 Å GaAs quantum wells, but no luminescence was detected from a 20 Å well. An 80Å GaAs/ 80Å Ga0.5In0.5P superlattice was grown, and superlattice satellite peaks were observed in the X-ray rocking curves. The appearance of misfit dislocations suggests localized intermixing at the interfaces.

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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