Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs (100) Substrate Using Unprecracked Arsine and Trimethylgallium

1991 ◽  
Vol 240 ◽  
Author(s):  
Seong-Ju Park ◽  
Jae-Ki Sim ◽  
Jeong-Rae Ro ◽  
Byueng-Su Yoo ◽  
Kyung-Ho Park ◽  
...  
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Hole Concentration ◽  
Impurity Content ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Electrical And Optical Properties ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE (chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises linearly as the V/III ratio is increased when TMGa and arsine are used. All of the runs produced p-type material mainly due to carbon incorporation with the hole concentration typically of 1017 cm−3. The impurity content of the layers was found to depend distinctly on the pressure of TMGa. The significant drop in hole concentration is due in part to the hydrogen atoms generated from decomposed AsH3 which then aids in the removal of CH3 radicals on the surface. As a result of using unprecracked arsine for growth of the GaAs epilayers, we measure substantial improvements in their electrical and optical properties.

scholarly journals Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

2002 ◽  
Vol 719 ◽  
Author(s):  
Rob Armitage ◽  
Qing Yang ◽  
Henning Feick ◽  
Yeonjoon Park ◽  
Eicke R. Weber
Keyword(s):  
Optical Properties ◽  
Carbon Tetrachloride ◽  
Molecular Beam Epitaxy ◽  
Carbon Content ◽  
Molecular Beam ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Heavily Doped ◽  
P Type ◽  
Dopant Source

AbstractCarbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (<5×1020 cm-3) were actually ntype rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow (∼6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
D. J. As ◽  
U. Köhler ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Rf Plasma ◽  
Spectral Position ◽  
Carbon Doped ◽  
Photoluminescence Line ◽  
Cubic Gan

AbstractThe optical properties of Carbon doped cubic GaN epilayers have been investigated by temperature and intensity dependent photoluminescence measurements. RF-plasma assisted molecular beam epitaxy equipped with an e-beam-evaporation source for carbon doping is used to grow the cubic GaN layers on GaAs (001) substrates. With increasing Carbon flux a new photoluminescence line at 3.08 eV appeared at 2K. This line is attributed to a donor acceptor transistion, which involves the shallow CN acceptor. From the spectral position the binding energy of the C acceptor is estimated to be about EC = 0.215 eV. Our experiments demonstrate that C indeed introduces a shallow acceptor in cubic GaN with an acceptor binding energy, which is about 15 meV lower than that observed for the Mg acceptor in cubic GaN. However, at high C fluxes a deep red luminescence band appeared at 2.1 eV, indicating compensation effects.

scholarly journals P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

1999 ◽  
Vol 4 (S1) ◽  
pp. 233-238
Author(s):  
D.J. As ◽  
T. Simonsmeier ◽  
J. Busch ◽  
B. Schöttker ◽  
M. Lübbers ◽  
...  
Keyword(s):  
Low Temperature ◽  
Shallow Donor ◽  
Rf Plasma ◽  
Pressure Curve ◽  
Blue Band ◽  
Vapor Pressure Curve ◽  
Cubic Gan ◽  
Donor Acceptor ◽  
Hall Effect Measurements ◽  
P Type

P-type doping with Mg and n-type doping with Si of cubic GaN (c-GaN) epilayers is reported. Cubic GaN films are grown by rf-plasma assisted MBE on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental Mg and Si are evaporated from thermal effusions cells. Secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and temperature dependent Hall-effect measurements are used to study the incorporation, optical and electrical properties. A Mg related shallow donor-acceptor transiton at 3.04 eV with an acceptor activation energy of EA= 0.230 eV is observed by low temperature PL. At Mg concentrations above 1018 cm−3 the dominance of a broad blue band indicates that also in c-GaN Mg is incorporated at different lattice sites or forms complexes. Si-doped c-GaN epilayers are ntype with electron concentrations up to 5*1019 cm−3. The incorporation of Si follows exactly the vapor pressure curve of Si, indicating a sticking coefficient of 1 for Si in cGaN. With increasing Si-concentration the intensity of the near-band luminescence continuously increases and broadens.

Characteristics of a phosphorus-doped p-type ZnO film by MBE

2005 ◽  
Vol 892 ◽  
Author(s):  
Faxian Xiu ◽  
Zheng Yang ◽  
Mandalapu J. Leelaprasanna ◽  
Jianlin Liu
Keyword(s):  
Hole Concentration ◽  
Substrate Surface ◽  
Hole Mobility ◽  
Effusion Cell ◽  
X Ray Diffraction ◽  
Pl Spectra ◽  
Hall Effect Measurements ◽  
Acceptor Energy Level ◽  
P Type ◽  
Phosphorus Doped

AbstractA solid-source GaP effusion cell was used to provide phosphorus dopants to achieve p-type ZnO with molecular-beam epitaxy (MBE). Room temperature (RT) Hall-effect measurements reveal that phosphorus-doped ZnO has a strong p-type conduction with a hole concentration of 6.5×1018 cm-3 and a hole mobility of 9.0 cm2/V s. X-ray diffraction measurements show a preferential growth orientation along <11-20> by θ-2θ scan and a tilt of ZnO (11-20) plane relative to the substrate surface by rocking curve and reciprocal space map. Photoluminescence (PL) spectra at 8.5 K show a dominant acceptor-bound exciton emission at 3.319 eV. The acceptor energy level of the phosphorus dopant is calculated to be 0.18 eV above the valence band from PL spectra, which is consistent with the temperature dependence of PL measurements.

Thermal Admittance Studies of Electron-Irradiated CdGeAs2

1999 ◽  
Vol 607 ◽  
Author(s):  
S.R. Smith ◽  
A.O. Evwaraye ◽  
M.C. Ohmer ◽  
P. J. Drevinsky ◽  
D. F. Bliss
Keyword(s):  
Optical Properties ◽  
Electrical Transport ◽  
Thermal Activation ◽  
Admittance Spectroscopy ◽  
Type Conversion ◽  
Electrical Transport Properties ◽  
Electrical And Optical Properties ◽  
Capacitance Voltage ◽  
Hall Effect Measurements ◽  
P Type

AbstractBrudnyi, et al., and Zwieback, et al., have shown that introducing damage by irradiation with MeV electrons can alter the electrical and optical properties of undoped p-type CdGeAs2(CGA) crystals. Brudnyi's studies of the electrical transport properties of isochronally annealed samples demonstrated type conversion and identified at least two new centers, one a stable donor. Zwieback used multi-MeV electrons to introduce compensating donors, thereby, significantly improving the optical transparency of CGA crystals. However, at the present little is known about these centers. Therefore, we have studied these centers by observing the properties of electron-irradiated specimens using Thermal Admittance Spectroscopy (TAS) and correlated the results of these measurements with capacitance-voltage measurements and Hall effect measurements. Measurements before an after irradiation are compared. The as-grown native acceptor concentrations in our samples varied from a low in the mid 1016 cm−3to nearly 1019 cm−3. Significant changes in the electrically active states in the band gap were seen as a result of a single irradiation with 2 MeV electrons to a total dose of 5 × 105cm−2. The samples appear to respond more strongly than Brudnyi's samples. The thermal activation energies have been determined using TAS and they will be reported.

P-Type Conductivity with a High Hole Mobility in Cubic GaN/GaAs Epilayers

1996 ◽  
Vol 449 ◽  
Author(s):  
D. J. As ◽  
A. Rüther ◽  
M. Lübbers ◽  
J. Mimkes ◽  
K. Lischka ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Theoretical Calculations ◽  
Hole Mobility ◽  
Growth Conditions ◽  
High Energy ◽  
Polar Optical Phonon ◽  
Temperature Dependent ◽  
Type Conductivity ◽  
Cubic Gan ◽  
P Type

ABSTRACTTemperature dependent Hall-Effect-measurements on unintentionally doped cubic GaN epilayers grown by molecular beam epitaxy (MBE) are reported. The cubic GaN layers have been deposited on semiinsulating (001) GaAs-substrates under N-stabilized growth conditions which were controlled by in-situ reflection high energy electron diffraction (RHEED) measurements. GaN-layers, which were fabricated under N-stabilized conditions have a (2×2) surface reconstruction during growth and show p-type conductivity. At room temperature the measured hole concentrations and mobilities are p = 9.7* 1012 cm-3, μp ≅ 350 cm2/Vs, respectively. Temperature dependent measurements of the carrier concentration yield an acceptor activation energy of EA = 0.445 eV. The nature of these defects will be discussed in view of intrinsic defects proposed by theoretical calculations already published in literature. The temperature dependence of the mobility is dominated by polar optical phonon scattering in the investigated temperature range.

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

Sign in / Sign up

Export Citation Format

Share Document