Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

ABSTRACTSynchrotron white beam x-ray topography techniques, in section and large-area transmission modes, have been applied to the evaluation of ELOG GaN on A12O3. Using the openings in 100 nm thick SiO2 windows, a new GaN growth took place, which resulted in typical overgrowth thicknesses of 6.8 μm. Measurements on the recorded Laue patterns indicate that the misorientation of GaN with respect to the sapphire substrate (excluding a 30° rotation between them) varies considerably along various crystalline directions, reaching a maximum of a ∼0.66° rotation of the (0001) plane about the [01•1] axis. This is ∼3% smaller than the misorientation measured in the non-ELOG reference, which reached a maximum of 0.68°. This misorientation varies measurably as the stripe or window dimensions are changed. The quality of the ELOG epilayers is improved when compared to the non- ELOG samples, though some local deviations from lattice coherence were observed. Long range and large-scale (order of 100 μm long) strain structures were observed in all multi quantum well epilayers.

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Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.l948 ◽

2007 ◽

Vol 46 (No. 39) ◽

pp. L948-L950 ◽

Cited By ~ 11

Author(s):

Ryota Senda ◽

Aya Miura ◽

Takemasa Hayakawa ◽

Takeshi Kawashima ◽

Daisuke Iida ◽

...

Keyword(s):

Epitaxial Lateral Overgrowth ◽

Crystalline Quality ◽

High Crystalline Quality ◽

Lateral Overgrowth

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Study of ELOG GaN for Application in the Fabrication of Micro-channels for Optoelectronic Devices

MRS Proceedings ◽

10.1557/proc-0892-ff26-08 ◽

2005 ◽

Vol 892 ◽

Author(s):

Lee E Rodak ◽

N J Berry Ann ◽

Kalyan Reddy Kasarla ◽

Nanying Yang ◽

D Korakakis

Keyword(s):

Three Dimensional ◽

Wide Band ◽

Epitaxial Lateral Overgrowth ◽

Wide Band Gap ◽

Lateral Overgrowth ◽

Micro Channels ◽

Lateral Growth Rate ◽

Technical Effort ◽

Novel Devices

AbstractGallium Nitride (GaN) is a promising wide band gap semiconductor material for many optoelectronic applications, especially in the near UV range. Over the past several years, an extensive technical effort has been focused on improving the quality of GaN films through various overgrowth techniques such as epitaxial lateral overgrowth (ELOG), facet controlled epitaxial lateral overgrowth (FACELO), and Pendeoepitaxy. ELOG has been shown to reduce the density of threading dislocations by up to five orders of magnitude [1], however a complete physical model describing lateral overgrowth is needed in order to take full advantage of the process. A lateral overgrowth model will allow for the design and fabrication of three dimensional structures that can lead to novel devices and also to efficient biosensors by integrating micro and nano channels on the same chip as the optoelectronic components.A two-step process has been used to successfully control the geometry of overgrown GaN. Conditions have been identified which give a reduced lateral growth rate, in order to allow expansion of the {112n} plane to form vertical sidewalls and for the design of channel width. These geometries are being examined for possible application in laser diode and micro-channel fabrication for integrating bio-agent detection modules.

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EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

Modern Physics Letters B ◽

10.1142/s0217984909020047 ◽

2009 ◽

Vol 23 (15) ◽

pp. 1881-1887 ◽

Cited By ~ 1

Author(s):

BO ZHANG ◽

JING CHEN ◽

XI WANG ◽

AIMIN WU ◽

JIEXIN LUO ◽

...

Keyword(s):

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Silicon On Insulator ◽

Epitaxial Lateral Overgrowth ◽

Micro Raman Spectroscopy ◽

Lateral Overgrowth ◽

Transmission Electron ◽

Single Process ◽

Soi Substrates

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition. The influence of stress on the behavior of dislocations at the coalescence during growth was observed using transmission electron microscopy (TEM). Improvement of the crystalline quality of the GaN layer was demonstrated by TEM and micro-Raman spectroscopy. Furthermore, the benefits of SOI substrates for GaN growth are also discussed.

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Characteristics of Fielo-GaN Grown by Hydride Vapor Phase Epitaxy

MRS Proceedings ◽

10.1557/proc-639-g5.6 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 4

Author(s):

Akira Usui ◽

Haruo Sunakawa ◽

Kenji Kobayashi ◽

Heiji Watanabe ◽

Masashi Mizuta

Keyword(s):

Electron Microscopy ◽

Dislocation Density ◽

Hydride Vapor Phase Epitaxy ◽

Epitaxial Lateral Overgrowth ◽

Rocking Curve ◽

X Ray ◽

Lateral Overgrowth ◽

Dislocation Behavior ◽

Reflection Electron Microscopy

ABSTRACTThe crystal quality of facet-initiated epitaxial lateral overgrowth (FIELO) -GaN, in particular, that in the vicinity of the GaN surface, is reported. It is shown that the surface smoothness of FIELO-GaN enables us to use it as an “epi-ready” substrate. The crystallinity of FIELO-GaN is evaluated by x-ray rocking curve (XRC) measurements. We indicate that the FWHM of XRC should be reduced with the decrease of the dislocation density. We previously reported that the dislocation behavior of FIELO-GaN causes the tilting of the c-axis in the overgrown regions. By using scanning reflection electron microscopy (SREM), however, we show that the tilting on the surface of thick FIELO-GaN was negligibly small.

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Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088816 ◽

1991 ◽

Vol 49 ◽

pp. 900-901 ◽

Cited By ~ 1

Author(s):

Alain Claverie ◽

Zuzanna Liliental-Weber

Keyword(s):

Transport Properties ◽

Layer Thickness ◽

Growth Temperature ◽

Low Temperatures ◽

Lattice Parameter ◽

Crystalline Quality ◽

Insulating Properties ◽

Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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