Effect of deposition pressure and post deposition annealing on SmCo thin film properties

2008 ◽  
Vol 5 (12) ◽  
pp. 3759-3762 ◽  
Author(s):  
Th. Speliotis ◽  
E. Makarona ◽  
F. Chouliaras ◽  
C. A. Charitidis ◽  
C. Tsamis ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Pressure ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Post Deposition

Post-deposition annealing effect on RF-sputtered TiO2 thin-film properties for photonic applications

2016 ◽  
Vol 122 (2) ◽  
Author(s):  
Ilhem Hadjoub ◽  
Tahar Touam ◽  
Azeddine Chelouche ◽  
Mohamed Atoui ◽  
Jeanne Solard ◽  
...  
Keyword(s):  
Thin Film ◽  
Tio2 Thin Film ◽  
Annealing Effect ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Post Deposition

Crystallization of Molybdenum Disulfide Films Deposited by Pulsed Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
J. S. Zabinski ◽  
M. S. Donley ◽  
P. J. John ◽  
V. J. Dyhouse ◽  
A. J. Safriet ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Raman Spectroscopy ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Emerging Technology ◽  
Substrate Material ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Deposition Parameters ◽  
Post Deposition

AbstractPulsed laser ablation (PLA) is an emerging technology that provides a mechanism to deposit lubricious films and to tailor film properties by the appropriate choice of substrate materials, deposition parameters and post deposition treatments. The properties of MoS2 films deposited by PLA are evaluated as a function of: (1) substrate material, (2) duration of post deposition annealing treatments using 248 nm laser radiation and (3) substrate temperature during deposition. The chemistry and crystal structure of the different films are determined using small angle X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). The tribological properties of the films are then evaluated as a function of their chemistry and crystal structure.

Improvement in Contact Resistivity to thin film Bi2Te3

2010 ◽  
Vol 1267 ◽  
Author(s):  
Rahul P Gupta ◽  
Ka Xiong ◽  
John B White ◽  
Kyeongjae Cho ◽  
Bruce Gnade
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Surface Preparation ◽  
Contact Resistivity ◽  
Post Deposition Annealing ◽  
Contact Metallization ◽  
Potential Contact ◽  
Te Material ◽  
The Impact ◽  
Post Deposition

AbstractA study of the impact of surface preparation and post-deposition annealing on contact resistivity for sputtered Ni and Co contacts to thin film Bi2Te3 is presented. The contact resistance values obtained using the transfer length method (TLM) for Ni is compared to Co as a potential contact metal to Bi2Te3. Post-deposition annealing at 100°C on samples that were sputter cleaned reduces the contact resistivity to < 10-7 Ω-cm2 for both Ni and Co contacts to Bi2Te3. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric (TE) material, making it a suitable candidate for contact metallization to Bi2Te3 based devices.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

scholarly journals Properties of Thin Film-Covered GaN(0001) Surfaces

2020 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapour Deposition ◽  
Metal Films ◽  
Physical Vapour Deposition ◽  
Surface Alloying ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Post Deposition

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

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