A low cost outdoor testing facility for detailed photovoltaic device performance characterization

This article was under review for ICELTICS 2018 -- In the medical world there is still service dissatisfaction caused by lack of blood type testing facility. If the number of tested blood arise, a lot of problems will occur so that electronic devices are needed to determine the blood type accurately and in short time. In this research we implemented an Artificial Neural Network on Xilinx Spartan 3S1000 Field Programable Gate Array using XSA-3S Board to identify the blood type. This research uses blood sample image as system input. VHSIC Hardware Discription Language is the language to describe the algorithm. The algorithm used is feed-forward propagation of backpropagation neural network. There are 3 layers used in design, they are input, hidden1, and output. At hidden1layer has two neurons. In this study the accuracy of detection obtained are 92%, 92%, 92%, 90% and 86% for 32x32, 48x48, 64x64, 80x80, and 96x96 pixel blood image resolution, respectively.

Download Full-text

Tailoring the CdS/CdSe/CdTe multilayer structure for optimization of photovoltaic device performance guided by mapping spectroscopic ellipsometry

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2020.110907 ◽

2021 ◽

Vol 221 ◽

pp. 110907

Author(s):

Mohammed A. Razooqi Alaani ◽

Prakash Koirala ◽

Puja Pradhan ◽

Adam B. Phillips ◽

Nikolas J. Podraza ◽

...

Keyword(s):

Spectroscopic Ellipsometry ◽

Multilayer Structure ◽

Photovoltaic Device ◽

Device Performance

Download Full-text

A universal approach for optimizing charge extraction in electron transporting layer-free organic solar cells via Lewis base doping

Journal of Materials Chemistry A ◽

10.1039/c9ta10002d ◽

2019 ◽

Vol 7 (45) ◽

pp. 25808-25817

Author(s):

Rong Wang ◽

Boxin Wang ◽

Jianqiu Wang ◽

Xuning Zhang ◽

Dongyang Zhang ◽

...

Keyword(s):

Electron Transfer ◽

Solar Cells ◽

Organic Solar Cells ◽

Photovoltaic Device ◽

Lewis Base ◽

Device Performance ◽

Universal Approach ◽

Electron Transporting Layer ◽

Charge Extraction ◽

Base Doping

Applying anion-induced electron transfer doping with a series of TXABr salts to non-fullerene organic solar cells enables to tune the doping efficiency and photovoltaic device performance.

Download Full-text

Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Nanomaterials ◽

10.3390/nano12020190 ◽

2022 ◽

Vol 12 (2) ◽

pp. 190

Author(s):

Ali Hassan ◽

Muhammad Azam ◽

Yeong Hwan Ahn ◽

Muhammad Zubair ◽

Yu Cao ◽

...

Keyword(s):

Graphene Oxide ◽

Dark Current ◽

High Performance ◽

Carrier Transport ◽

Defect Density ◽

Low Cost ◽

Degradation Process ◽

Device Performance ◽

Interface Engineering ◽

Defect Passivation

Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

Download Full-text

Supplementary material to "Performance Characterization of Low-cost Air Quality Sensors for Off-grid Deployment in Rural Malawi"

10.5194/amt-2021-372-supplement ◽

2021 ◽

Author(s):

Ashley S. Bittner ◽

Eben S. Cross ◽

David H. Hagan ◽

Carl Malings ◽

Eric Lipsky ◽

...

Keyword(s):

Air Quality ◽

Low Cost ◽

Performance Characterization ◽

Supplementary Material

Download Full-text

A graphene/single GaAs nanowire Schottky junction photovoltaic device

Nanoscale ◽

10.1039/c8nr00158h ◽

2018 ◽

Vol 10 (19) ◽

pp. 9212-9217 ◽

Cited By ~ 25

Author(s):

Yanbin Luo ◽

Xin Yan ◽

Jinnan Zhang ◽

Bang Li ◽

Yao Wu ◽

...

Keyword(s):

High Performance ◽

Low Cost ◽

Optoelectronic Devices ◽

Photovoltaic Device ◽

Schottky Junction ◽

Gaas Nanowire

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices.

Download Full-text

Forward discrete probability propagation method for device performance characterization under process variations

Proceedings of the 2005 conference on Asia South Pacific design automation - ASP-DAC '05 ◽

10.1145/1120725.1120809 ◽

2005 ◽

Author(s):

Rasit Onur Topaloglu ◽

Alex Orailoglu

Keyword(s):

Process Variations ◽

Device Performance ◽

Performance Characterization ◽

Discrete Probability ◽

Probability Propagation

Download Full-text

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Scientific Reports ◽

10.1038/s41598-020-77681-z ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Soufiane Karrakchou ◽

Suresh Sundaram ◽

Taha Ayari ◽

Adama Mballo ◽

Phuong Vuong ◽

...

Keyword(s):

Low Cost ◽

Van Der Waals ◽

Thermal Dissipation ◽

Silicon Substrates ◽

Device Performance ◽

Selective Area Growth ◽

Material Quality ◽

Large Size ◽

Selective Area ◽

Area Growth

AbstractSelective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications.

Download Full-text