High-mobility flexible thin-film transistors with a low-temperature zirconium-doped indium oxide channel layer

2016 ◽  
Vol 10 (6) ◽  
pp. 493-497 ◽  
Author(s):  
Peng Xiao ◽  
Ting Dong ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Wei Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

Low-Temperature Aqueous Route Processed Indium Oxide Thin-Film Transistors by NH3 Plasma-Assisted Treatment

2019 ◽  
Vol 66 (3) ◽  
pp. 1302-1307 ◽  
Author(s):  
Xuyang Li ◽  
Jin Cheng ◽  
Yonghua Chen ◽  
Yunfei He ◽  
Yan Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures

2018 ◽  
Vol 10 (24) ◽  
pp. 20661-20671 ◽  
Author(s):  
Jan Krausmann ◽  
Shawn Sanctis ◽  
Jörg Engstler ◽  
Martina Luysberg ◽  
Michael Bruns ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Charge Transport ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Oxide Heterostructures

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Indium Oxide Thin Film

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.

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