High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

2020 ◽  
Vol 52 (12) ◽  
pp. 1083-1088 ◽  
Author(s):  
Adéla Jagerová ◽  
Petr Malinský ◽  
Romana Mikšová ◽  
Pavla Nekvindová ◽  
Jakub Cajzl ◽  
...  
Author(s):  
J. Albert ◽  
B. Malo ◽  
D. C. Johnson ◽  
K. O. Hill ◽  
J. L. Brebner ◽  
...  

2015 ◽  
Vol 1769 ◽  
Author(s):  
A. Crespo-Sosa ◽  
P.E. Mota-Santiago ◽  
J.L. Jiménez-Hernández ◽  
H.G. Silva-Pereyra ◽  
E.V. García-Ramírez ◽  
...  

ABSTRACTSapphire is best known for its hardness that makes it ideal for many mechanical and optical applications, but its resistance to radiation damage and its optical properties, combined with metallic nano-particles, make it promising for future opto-electronic and plasmonic devices. In this paper, we present an overview of our work on the fabrication of metallic nano-particles embedded in synthetic sapphire by means of ion implantation, thermal annealing and high energy ion irradiation. We show that we can have control over the amount and size of the nano particles formed inside the matrix by carefully choosing the parameters during the preparation process. Furthermore, we show that anisotropic nano particles can be obtained by an adequate high energy ion irradiation of the originally spherical nano particles. We also have studied the linear and non-linear optical properties of these nano-composites and have confirmed that they are large enough for future applications.


1995 ◽  
Vol 396 ◽  
Author(s):  
K. Harada ◽  
Y. Makita ◽  
H. Shibata ◽  
B. Lo ◽  
A. C. Beye ◽  
...  

AbstractHg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.


2003 ◽  
Vol 22 (4) ◽  
pp. 225-237
Author(s):  
K. J. GRANT ◽  
ROBERTS A. ◽  
D. N. JAMIESON ◽  
B. ROUT ◽  
C. CHER

Author(s):  
Ueno Keiji ◽  
Matsumoto Yasuyo ◽  
Nishimiya Nobuyuki ◽  
Noshiro Mitsuru ◽  
Satou Mamoru
Keyword(s):  

1993 ◽  
Vol 316 ◽  
Author(s):  
Yukinori Saito ◽  
Shinji Suganomata ◽  
P. Moretti

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.


Vacuum ◽  
1992 ◽  
Vol 43 (5-7) ◽  
pp. 699-701 ◽  
Author(s):  
L Ya Alimova ◽  
IE Djamaletdinova ◽  
TS Pugacheva ◽  
IE Ilicheva

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