High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

2020 ◽  
Vol 52 (12) ◽  
pp. 1083-1088 ◽  
Author(s):  
Adéla Jagerová ◽  
Petr Malinský ◽  
Romana Mikšová ◽  
Pavla Nekvindová ◽  
Jakub Cajzl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
High Energy ◽  
Structure Modification

Some optical properties of waveguides made by high energy ion implantation in fused silica

1992 ◽  
Author(s):  
J. Albert ◽  
B. Malo ◽  
D. C. Johnson ◽  
K. O. Hill ◽  
J. L. Brebner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
High Energy ◽  
Fused Silica

Metallic Nano Particles Embedded in Sapphire

2015 ◽  
Vol 1769 ◽  
Author(s):  
A. Crespo-Sosa ◽  
P.E. Mota-Santiago ◽  
J.L. Jiménez-Hernández ◽  
H.G. Silva-Pereyra ◽  
E.V. García-Ramírez ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Ion Irradiation ◽  
High Energy ◽  
Nano Particles ◽  
Nano Composites ◽  
Preparation Process ◽  
The Matrix ◽  
Linear Optical Properties ◽  
Optical Applications

ABSTRACTSapphire is best known for its hardness that makes it ideal for many mechanical and optical applications, but its resistance to radiation damage and its optical properties, combined with metallic nano-particles, make it promising for future opto-electronic and plasmonic devices. In this paper, we present an overview of our work on the fabrication of metallic nano-particles embedded in synthetic sapphire by means of ion implantation, thermal annealing and high energy ion irradiation. We show that we can have control over the amount and size of the nano particles formed inside the matrix by carefully choosing the parameters during the preparation process. Furthermore, we show that anisotropic nano particles can be obtained by an adequate high energy ion irradiation of the originally spherical nano particles. We also have studied the linear and non-linear optical properties of these nano-composites and have confirmed that they are large enough for future applications.

High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs : Formation of New Shallow Emission Bands

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Harada ◽  
Y. Makita ◽  
H. Shibata ◽  
B. Lo ◽  
A. C. Beye ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Activation Energy ◽  
Optical Properties ◽  
Ion Implantation ◽  
Conduction Band ◽  
High Energy ◽  
Acceptor Impurity ◽  
Furnace Annealing ◽  
Deep Acceptor ◽  
Lec Gaas

AbstractHg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

Long Period Gratings in Multimode Fiber Fabricated with High-Energy Ion Implantation

2003 ◽  
Vol 22 (4) ◽  
pp. 225-237
Author(s):  
K. J. GRANT ◽  
ROBERTS A. ◽  
D. N. JAMIESON ◽  
B. ROUT ◽  
C. CHER
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Multimode Fiber ◽  
Long Period ◽  
Long Period Gratings

Effects of high-energy (MeV) ion implantation of polyester films

1991 ◽  
Vol 59-60 ◽  
pp. 1263-1266 ◽  
Author(s):  
Ueno Keiji ◽  
Matsumoto Yasuyo ◽  
Nishimiya Nobuyuki ◽  
Noshiro Mitsuru ◽  
Satou Mamoru
Keyword(s):  
Ion Implantation ◽  
High Energy

Temperature Dependence of the Fading Speed of Blue-Green Produced by Cu Ion Implantation into LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
Yukinori Saito ◽  
Shinji Suganomata ◽  
P. Moretti
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Visible Region ◽  
Host Crystal

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.

High-energy ion implantation in polymer films

Vacuum ◽  
1992 ◽  
Vol 43 (5-7) ◽  
pp. 699-701 ◽  
Author(s):  
L Ya Alimova ◽  
IE Djamaletdinova ◽  
TS Pugacheva ◽  
IE Ilicheva
Keyword(s):  
Ion Implantation ◽  
Polymer Films ◽  
High Energy
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