Some optical properties of waveguides made by high energy ion implantation in fused silica

ABSTRACTSapphire is best known for its hardness that makes it ideal for many mechanical and optical applications, but its resistance to radiation damage and its optical properties, combined with metallic nano-particles, make it promising for future opto-electronic and plasmonic devices. In this paper, we present an overview of our work on the fabrication of metallic nano-particles embedded in synthetic sapphire by means of ion implantation, thermal annealing and high energy ion irradiation. We show that we can have control over the amount and size of the nano particles formed inside the matrix by carefully choosing the parameters during the preparation process. Furthermore, we show that anisotropic nano particles can be obtained by an adequate high energy ion irradiation of the originally spherical nano particles. We also have studied the linear and non-linear optical properties of these nano-composites and have confirmed that they are large enough for future applications.

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High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs : Formation of New Shallow Emission Bands

MRS Proceedings ◽

10.1557/proc-396-835 ◽

1995 ◽

Vol 396 ◽

Author(s):

K. Harada ◽

Y. Makita ◽

H. Shibata ◽

B. Lo ◽

A. C. Beye ◽

...

Keyword(s):

Heat Treatment ◽

Activation Energy ◽

Optical Properties ◽

Ion Implantation ◽

Conduction Band ◽

High Energy ◽

Acceptor Impurity ◽

Furnace Annealing ◽

Deep Acceptor ◽

Lec Gaas

AbstractHg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

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Buried optical waveguides in fused silica by high−energy oxygen ion implantation

Journal of Applied Physics ◽

10.1063/1.321625 ◽

1975 ◽

Vol 46 (2) ◽

pp. 955-957 ◽

Cited By ~ 25

Author(s):

E. V. K. Rao ◽

D. Moutonnet

Keyword(s):

Ion Implantation ◽

Optical Waveguides ◽

High Energy ◽

Fused Silica ◽

Oxygen Ion ◽

Oxygen Ion Implantation

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Synthesis, Optical Properties, and Microstructure of Semiconductor Nanocrystals Formed by Ion Implantation

MRS Proceedings ◽

10.1557/proc-452-89 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 20

Author(s):

J. D. Budai ◽

C. W. White ◽

S. P. Withrow ◽

R. A. Zuhr ◽

J. G. Zhu

Keyword(s):

Optical Properties ◽

Ion Implantation ◽

Lattice Structure ◽

Semiconductor Nanocrystals ◽

Surface Region ◽

Substrate Material ◽

Fused Silica ◽

High Dose ◽

Si Substrates ◽

Nanostructured Composite

AbstractHigh-dose ion implantation, followed by annealing, has been shown to provide a versatile technique for creating semiconductor nanocrystals encapsulated in the surface region of a substrate material. We have successfully formed nanocrystalline precipitates from groups IV (Si, Ge, SiGe), III-V (GaAs, InAs, GaP, InP, GaN), and II-VI (CdS, CdSe, CdSxSe1x, CdTe, ZnS, ZnSe) in fused silica, Al2O3 and Si substrates. Representative examples will be presented in order to illustrate the synthesis, microstructure, and optical properties of the nanostructured composite systems. The optical spectra reveal blue-shifts in good agreement with theoretical estimates of size-dependent quantum-confinement energies of electrons and holes. When formed in crystalline substrates, the nanocrystal lattice structure and orientation can be reproducibly controlled by adjusting the implantation conditions.

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Si3 N4/SiO2 Multi-Layer Reflecting Stacks for Photonic Switching Applications

MRS Proceedings ◽

10.1557/proc-298-223 ◽

1993 ◽

Vol 298 ◽

Author(s):

D.J. Stephens ◽

S.S. He ◽

G. Lucovsky ◽

H. Mikkelsen ◽

K. Leo

Keyword(s):

Optical Properties ◽

Periodic Structures ◽

Chemical Vapor ◽

Optical Path Length ◽

High Energy ◽

Fused Silica ◽

Nitride Film ◽

Photonic Switching ◽

Model Calculations ◽

Nitride Layers

AbstractWe have fabricated stacked-structures comprised of i) fused silica substrates, and ii) near-periodic Si3N4/SiO2 bi-layers by low-temperature, 250°C, remote plasmaenhanced chemical-vapor deposition. Comparing the reflectance of these structures with model calculations, we have been able to identify the effects on the reflectance spectra of departures from i) exact periodicity, ii) not having the constituent dielectric layers each posses an ideal optical path length, OPL, exactly equal to λcentral/4, and iii) the intrinsic dispersion in the dielectric functions of the oxide and nitride materials. We have prepared quasi-periodic structures in which the OPL of the higher index Si3N4 layer was > λcentral/4, and in which the OPL of the lower index SiO2 layer was < λcentral/4. This promotes a second strong reflectance band at an energy that is approximately two times that of the primary band. Calculations have shown that the reflectance values in this band, and near a reflectance minimum on the high energy side of the band, are both very sensitive to changes in the optical properties of the nitride film. We present calculations that demonstrate the effects on the reflectance of this band by a temperature-induced modulation of the optical properties of the oxide and nitride layers.

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