Temperature Dependence of the Fading Speed of Blue-Green Produced by Cu Ion Implantation into LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
Yukinori Saito ◽  
Shinji Suganomata ◽  
P. Moretti
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Visible Region ◽  
Host Crystal

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.

EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Deep Level ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Structural And Optical Properties

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

scholarly journals Tuning the optoelectronic properties of hematite with rhodium doping for photoelectrochemical water splitting using density functional theory approach

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Abdur Rauf ◽  
Muhammad Adil ◽  
Shabeer Ahmad Mian ◽  
Gul Rahman ◽  
Ejaz Ahmed ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Optical Properties ◽  
Optical Absorption ◽  
Water Splitting ◽  
Density Functional ◽  
Formation Energy ◽  
Visible Region ◽  
Photoelectrochemical Water Splitting ◽  
Theory Approach ◽  
Functional Theory

AbstractHematite (Fe2O3) is one of the best candidates for photoelectrochemical water splitting due to its abundance and suitable bandgap. However, its efficiency is mostly impeded due to the intrinsically low conductivity and poor light absorption. In this study, we targeted this intrinsic behavior to investigate the thermodynamic stability, photoconductivity and optical properties of rhodium doped hematite using density functional theory. The calculated formation energy of pristine and rhodium doped hematite was − 4.47 eV and − 5.34 eV respectively, suggesting that the doped material is thermodynamically more stable. The DFT results established that the bandgap of doped hematite narrowed down to the lower edge (1.61 eV) in the visible region which enhanced the optical absorption and photoconductivity of the material. Moreover, doped hematite has the ability to absorb a broad spectrum (250–800) nm. The enhanced optical absorption boosted the photocurrent and incident photon to current efficiency. The calculated results also showed that the incorporation of rhodium in hematite induced a redshift in optical properties.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

The Application of ß“-Alumina As A Solid State Laser Host

1985 ◽  
Vol 60 ◽  
Author(s):  
J. D. Barrie ◽  
D. L. Yang ◽  
B. Dunn ◽  
O. M. Stafsudd
Keyword(s):  
Optical Properties ◽  
Solid State ◽  
Ion Exchange ◽  
Exchange Process ◽  
Laser Action ◽  
Solid State Laser ◽  
Host Crystal ◽  
State Laser ◽  
Ion Exchange Process ◽  
Single Host

AbstractIon exchanged ß“-aluminas display a number of interesting optical properties which suggest that the material is well suited for application as a solid state laser host. Small platelets of Nd3+ Ion exchanged β“-alumina exhibit laser action with gain coefficients many times greater than YAG. The versatility of the ion exchange process enables one to form a wide variety of compounds with different active ions and concentrations, thereby allowing the study of many different effects within a single host crystal.

Influence of ion implantation on the optical properties of magnetic garnet films

1990 ◽  
Author(s):  
G. Schueer ◽  
D. Kollewe ◽  
Horst Doetsch ◽  
A. Brockmeyer
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Garnet Films ◽  
Magnetic Garnet

Optical properties of surface modified polypropylene by plasma immersion ion implantation technique

2010 ◽  
Vol 97 (8) ◽  
pp. 081908 ◽  
Author(s):  
Sk. Faruque Ahmed ◽  
Myoung-Woon Moon ◽  
Chansoo Kim ◽  
Yong-Jun Jang ◽  
Seonghee Han ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Implantation Technique ◽  
Plasma Immersion Ion Implantation ◽  
Surface Modified

Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

1998 ◽  
Vol 253 (1-2) ◽  
pp. 284-291 ◽  
Author(s):  
Hirofumi Kakemoto ◽  
Hiroshi Katsumata ◽  
Takeaki Takada ◽  
Yu-shin Tsai ◽  
Masataka Hasegawa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation

Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals

2001 ◽  
Vol 16 (8) ◽  
pp. 2196-2199 ◽  
Author(s):  
H. Y. Lee ◽  
T. W. Kang ◽  
T. W. Kim
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Reasonable Agreement ◽  
Theoretical Calculations ◽  
Optoelectronic Devices ◽  
Activation Energies ◽  
Acoustic Parameters ◽  
Longitudinal Acoustic ◽  
Pl Spectra

Photoluminescence (PL) measurements were performed on p-Cd0.96Zn0.04Te single crystals to investigate the dependence of the excitons on temperature. The activation energies and the longitudinal acoustic parameters of the excitons were determined from the temperature dependence of the PL spectra and were in reasonable agreement with the theoretical calculations. These results can help improve understanding for the application of p-CdxZn1–xTe single crystals in optoelectronic devices.

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