High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs : Formation of New Shallow Emission Bands

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Harada ◽  
Y. Makita ◽  
H. Shibata ◽  
B. Lo ◽  
A. C. Beye ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Activation Energy ◽  
Optical Properties ◽  
Ion Implantation ◽  
Conduction Band ◽  
High Energy ◽  
Acceptor Impurity ◽  
Furnace Annealing ◽  
Deep Acceptor ◽  
Lec Gaas

AbstractHg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

2020 ◽  
Vol 52 (12) ◽  
pp. 1083-1088 ◽  
Author(s):  
Adéla Jagerová ◽  
Petr Malinský ◽  
Romana Mikšová ◽  
Pavla Nekvindová ◽  
Jakub Cajzl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
High Energy ◽  
Structure Modification

Some optical properties of waveguides made by high energy ion implantation in fused silica

1992 ◽  
Author(s):  
J. Albert ◽  
B. Malo ◽  
D. C. Johnson ◽  
K. O. Hill ◽  
J. L. Brebner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
High Energy ◽  
Fused Silica

Optical and Electrical Properties of Heavily Carbon-Doped Gaas Fabricated by High-Energy Ion-Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
Takayuki Shima ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Kentaro Harada ◽  
Tsutomu Iida ◽  
...  
Keyword(s):  
High Energy ◽  
Excitation Power ◽  
The Other ◽  
Optical And Electrical Properties ◽  
Furnace Annealing ◽  
Carbon Doped ◽  
Gaas Substrates ◽  
Activation Rate ◽  
Lec Gaas ◽  
Hall Effect Measurements

AbstractHigh-energy (400 keV) implantation of carbon (C) ions was made into LEC-GaAs substrates with C concentration ([C]) of 1019− 1022Cm−3. 2 K photoluminescence (PL) and Hall effect measurements indicated that activation rate of C in LEC GaAs is both optically and electrically extremely low even after furnace-annealing at 850 °C for 20 min. For [C] = 1×1022 cm−3, two novel strong emissions were obtained and PL measurements as a function of excitation power and sample temperature suggested that the two emissions one at 1.485 eV and the other at 1.305 eV should reflect the formation of a new alloy between GaAs and C. Dual implantation of C+ and Ga+ ions was carried out to improve the activation or substitution rate. We found that nearly 90% activation rate can be achieved for C dose of 2.2 × 1013 cm−2.

Rapid Thermal Annealing of High Energy Si Implants Into GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Ronald N. Legge ◽  
Wayne M. Paulson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Low Dose ◽  
High Energy ◽  
Low Noise ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Lec Gaas

ABSTRACTRapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.

Metallic Nano Particles Embedded in Sapphire

2015 ◽  
Vol 1769 ◽  
Author(s):  
A. Crespo-Sosa ◽  
P.E. Mota-Santiago ◽  
J.L. Jiménez-Hernández ◽  
H.G. Silva-Pereyra ◽  
E.V. García-Ramírez ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Ion Irradiation ◽  
High Energy ◽  
Nano Particles ◽  
Nano Composites ◽  
Preparation Process ◽  
The Matrix ◽  
Linear Optical Properties ◽  
Optical Applications

ABSTRACTSapphire is best known for its hardness that makes it ideal for many mechanical and optical applications, but its resistance to radiation damage and its optical properties, combined with metallic nano-particles, make it promising for future opto-electronic and plasmonic devices. In this paper, we present an overview of our work on the fabrication of metallic nano-particles embedded in synthetic sapphire by means of ion implantation, thermal annealing and high energy ion irradiation. We show that we can have control over the amount and size of the nano particles formed inside the matrix by carefully choosing the parameters during the preparation process. Furthermore, we show that anisotropic nano particles can be obtained by an adequate high energy ion irradiation of the originally spherical nano particles. We also have studied the linear and non-linear optical properties of these nano-composites and have confirmed that they are large enough for future applications.

A New Application of Rbs-Pixe with High Energy Microbeam

1986 ◽  
Vol 69 ◽  
Author(s):  
B. Raicu ◽  
H. Bakhru ◽  
S. Fesseha ◽  
W. M. Gibson
Keyword(s):  
Ion Implantation ◽  
Transport System ◽  
High Energy ◽  
Silicon Wafers ◽  
High Dose ◽  
Furnace Annealing ◽  
Pixe Analysis ◽  
X Ray ◽  
Technological Factors ◽  
Beam Sputtering

AbstractA beam of 2 MeV He+ ions with a diameter of 2 microns was used to perform Rutherford backscattering (RBS) and particle induced x-ray emission (PIXE) analysis on large residual defects formed by high dose arsenic (As) ion implantation and furnace annealing. Research results concerning contamination in implanted silicon wafers generated by primary beam sputtering, inadequate wafer transport system, and other technological factors are presented.

Regrowth of Damaged Layers in Diamond Produced by Ion Implantation

1989 ◽  
Vol 162 ◽  
Author(s):  
G. S. Sandhu ◽  
B. Liu ◽  
N. R. Parikh ◽  
J. D. Hunn ◽  
M. L. Swanson ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Ion Implantation ◽  
Electric Field Gradient ◽  
Perturbed Angular Correlation ◽  
Complete Recovery ◽  
High Energy ◽  
Optical Measurements ◽  
Carbon Ions ◽  
Furnace Annealing

ABSTRACTWe have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or indium ions. For C or C plus B implantation doses of 2 ×1015 cm−2 or less, complete recovery of channeling damage occurred after RTA at 1100°C or furnace annealing at 900°C. Optical measurements on samples implanted with high energy carbon ions show better recovery compared to the shallower implantations. PAC results showed that co-implantation with C and In caused a considerable fraction (∼15%) of the In-atoms to occupy well-defined lattice sites characterized by an electric field gradient having its major component along <111>, and a frequency of 116 MHz.

scholarly journals Tuning Green to Red Color in Erbium Niobate Micro- and Nanoparticles

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 660
Author(s):  
Susana Devesa ◽  
Joana Rodrigues ◽  
Sílvia Soreto Teixeira ◽  
Aidan P. Rooney ◽  
Manuel P. F. Graça ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Optical Properties ◽  
Room Temperature ◽  
Sol Gel ◽  
High Energy ◽  
Site Symmetry ◽  
Photoluminescence Spectra ◽  
Heat Treated ◽  
Red Color ◽  
Optical Activation

Tetragonal Er0.5Nb0.5O2 and monoclinic ErNbO4 micro- and nanoparticles were prepared by the citrate sol–gel method and heat-treated at temperatures between 700 and 1600 °C. ErNbO4 revealed a spherical-shaped crystallite, whose size increased with heat treatment temperatures. To assess their optical properties at room temperature (RT), a thorough spectroscopic study was conducted. RT photoluminescence (PL) spectroscopy revealed that Er3+ optical activation was achieved in all samples. The photoluminescence spectra show the green/yellow 2H11/2, 4S3/2→4I15/2 and red 4F9/2→4I15/2 intraionic transitions as the main visible recombination, with the number of the crystal field splitting Er3+ multiplets reflecting the ion site symmetry in the crystalline phases. PL excitation allows the identification of Er3+ high-energy excited multiplets as the preferential population paths of the emitting levels. Independently of the crystalline structure, the intensity ratio between the green/yellow and red intraionic transitions was found to be strongly sensitive to the excitation energy. After pumping the samples with a resonant excitation into the 4G11/2 excited multiplet, a green/yellow transition stronger than the red one was observed, whereas the reverse occurred for higher excitation photon energies. Thus, a controllable selective excited tunable green to red color was achieved, which endows new opportunities for photonic and optoelectronic applications.

Long Period Gratings in Multimode Fiber Fabricated with High-Energy Ion Implantation

2003 ◽  
Vol 22 (4) ◽  
pp. 225-237
Author(s):  
K. J. GRANT ◽  
ROBERTS A. ◽  
D. N. JAMIESON ◽  
B. ROUT ◽  
C. CHER
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Multimode Fiber ◽  
Long Period ◽  
Long Period Gratings
Sign in / Sign up

Export Citation Format

Share Document