Determination of ultrathin film growth modes using inelastic Auger electrons: Sm/Cr (211)

1990 ◽  
Vol 16 (1-12) ◽  
pp. 188-192 ◽  
Author(s):  
P. Dubot ◽  
M. G. Barthés-Labrousse ◽  
J. P. Langeron
Keyword(s):  
Film Growth ◽  
Ultrathin Film ◽  
Auger Electrons ◽  
Growth Modes

Preparation of Large Area Cross-Sectional Tem Specimen of Semiconducting Heteroepitaxial Materials

1991 ◽  
Vol 254 ◽  
Author(s):  
M. Tamura ◽  
S. Aoki
Keyword(s):  
Sample Preparation ◽  
Film Growth ◽  
General Information ◽  
One Dimension ◽  
Main Principle ◽  
Large Area ◽  
Cross Sectional ◽  
Growth Modes ◽  
Present Technique ◽  
Grinding And Polishing

AbstractThe sample preparation procedures which enable us to observe large areas over a few tens of microns in one-dimension of semiconducting heteroepitaxial materials are described. The main principle involves the careful grinding and polishing of samples. In these procedures, another side thinning of the specimen after finishing initial side polishing is carried out using a sample platform by hand throughout all of the following steps. It is shown that for some typical examples of heteroepitaxial films general information concerning the film growth modes and structures, as well as the defect morphologies and natures introduced during growth can be effectively obtained by using the present technique.

INTERACTIONS AT METAL/OXIDE AND OXIDE/OXIDE INTERFACES STUDIED BY ULTRATHIN FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES

1995 ◽  
Vol 02 (01) ◽  
pp. 109-126 ◽  
Author(s):  
ROBERT J. LAD
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Film Growth ◽  
Ultrathin Film ◽  
Reaction Products ◽  
Impurity Effects ◽  
Crystal Surfaces ◽  
Oxide Interfaces ◽  
Single Crystal Surfaces ◽  
Oxide Substrates

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO (100), TiO 2(110), and [Formula: see text] surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.

scholarly journals Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

2011 ◽  
Vol 60 (9) ◽  
pp. 098108
Author(s):  
Pan Shu-Wan ◽  
Qi Dong-Feng ◽  
Chen Song-Yan ◽  
Li Cheng ◽  
Huang Wei ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Film Growth ◽  
Ultrathin Film

Ellipsometric Measurement of Bacterial Films at Metal-Electrolyte Interfaces

1998 ◽  
Vol 64 (10) ◽  
pp. 3690-3697 ◽  
Author(s):  
J. P. Busalmen ◽  
S. R. de Sánchez ◽  
D. J. Schiffrin
Keyword(s):  
Film Growth ◽  
Film Formation ◽  
High Sensitivity ◽  
Bacterial Attachment ◽  
Optical Measurements ◽  
Ellipsometric Measurement ◽  
Effective Medium Model ◽  
Bacterial Films ◽  
Bacterial Film

ABSTRACT Ellipsometric measurements were used to monitor the formation of a bacterial cell film on polarized metal surfaces (Al-brass and Ti). Under cathodic polarization bacterial attachment was measured from changes in the ellipsometric angles. These were fitted to an effective medium model for a nonabsorbing bacterial film with an effective refractive index (nf ) of 1.38 and a thickness (df ) of 160 ± 10 nm. From the optical measurements a surface coverage of 17% was estimated, in agreement with direct microscopic observations. The influence of bacteria on the formation of oxide films was monitored by ellipsometry following the film growth in situ. A strong inhibition of metal oxide film formation was observed, which was assigned to the decrease in oxygen concentration due to the presence of bacteria. It is shown that the irreversible adhesion of bacteria to the surface can be monitored ellipsometrically. Electrophoretic mobility is proposed as one of the factors determining bacterial attachment. The high sensitivity of ellipsometry and its usefulness for the determination of growth of interfacial bacterial films is demonstrated.

Models of Thin Film Growth Modes

JOM ◽  
1987 ◽  
Vol 39 (6) ◽  
pp. 19-23 ◽  
Author(s):  
George H. Gilmer ◽  
Marcia H. Grabow
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Modes

Electrodeposited non-stoichiometric tungstic acid for electrochromic applications: film growth modes, crystal structure, redox behavior and stability

2016 ◽  
Vol 388 ◽  
pp. 786-793 ◽  
Author(s):  
Leonid V. Pugolovkin ◽  
Olga V. Cherstiouk ◽  
Lyudmila M. Plyasova ◽  
Irina Yu. Molina ◽  
Tatyana Yu. Kardash ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Film Growth ◽  
Tungstic Acid ◽  
Redox Behavior ◽  
Growth Modes

scholarly journals Application of screen-printed carbon electrode modified with lead in stripping analysis of Cd(II)

2017 ◽  
Vol 15 (1) ◽  
pp. 28-33 ◽  
Author(s):  
Katarzyna Tyszczuk-Rotko ◽  
Katarzyna Domańska ◽  
Karel Vytřas ◽  
Radovan Metelka ◽  
Agnieszka Nosal-Wiercińska ◽  
...  
Keyword(s):  
Film Growth ◽  
Film Formation ◽  
Anodic Stripping Voltammetry ◽  
Stripping Voltammetry ◽  
Carbon Support ◽  
Screen Printed Carbon Electrode ◽  
Voltammetric Studies ◽  
Lead Film ◽  
Screen Printed

AbstractIn the work presented, a lead film electrode was prepared in situ on a screen-printed carbon support using a reversibly deposited mediator (Zn) and applied to the determination of Cd(II) by anodic stripping voltammetry. The electrochemical method for lead film formation is based on a co-deposition of a metal of interest (Pb), with a reversibly deposited zinc mediator, followed by oxidation of zinc, with additional deposition of lead at the appropriate potential. It serves to increase the density of lead particles, promoting lead film growth, and consequently helps to improve the electrochemical properties of the electrode. This was confirmed by microscopic and voltammetric studies. The obtained detection limit of Cd(II) is equal to 6.6 × 10−9 mol L−1 (−1.6 V for 180 s and then −0.95 V for 5 s). The presented procedure was successfully applied to cadmium determination in Bystrzyca River water samples.

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