AbstractPerovskite solar cells continue to garner significant attention in the field of photovoltaics. As the optoelectronic properties of the absorbers become better understood, attention has turned to more deeply understanding the contribution of charge transport layers for efficient extraction of carriers. Titanium oxide is known to be an effective electron transport layer (ETL) in planar perovskite solar cells, but it is unlikely to result in the best device performance possible. To investigate the importance of band energy alignment between the electron transport layer and perovskite, we employ numerical modeling as a function of conduction band offset between these layers, interface recombination velocity, and ETL doping levels. Our simulations offer insight into the advantages of energy band alignment and allow us to determine a range of surface recombination velocities and ETL doping densities that will allow us to identify novel high performance ETL materials.
Role of surface recombination in perovskite solar cells at the interface of HTL/CH3NH3PbI3
