Silicon, binding energies of ground and selected excited states of S-, Se-, and Te-related centers

2005 ◽  
pp. 1-3
Author(s):  
Keyword(s):  
Excited States ◽  
Binding Energies

scholarly journals Universality of excited three-body bound states in one dimension

2021 ◽  
Author(s):  
Lucas Happ ◽  
Matthias Zimmermann ◽  
Maxim A Efremov
Keyword(s):  
Excited States ◽  
Bound States ◽  
Space Dimension ◽  
Binding Energies ◽  
Wave Functions ◽  
One Dimension ◽  
Strong Indication ◽  
Body System ◽  
Weakly Bound ◽  
Three Body

Abstract We study a heavy-heavy-light three-body system confined to one space dimension in the regime where an excited state in the heavy-light subsystems becomes weakly bound. The associated two-body system is characterized by (i) the structure of the weakly-bound excited heavy-light state and (ii) the presence of deeply-bound heavy-light states. The consequences of these aspects for the behavior of the three-body system are analyzed. We find a strong indication for universal behavior of both three-body binding energies and wave functions for different weakly-bound excited states in the heavy-light subsystems.

scholarly journals COMPARISON BETWEEN THE RELATIVISTIC AND NON-RELATIVISTIC TREATMENT OF THE Λ-HYPERNUCLEI

2020 ◽  
Vol 2 ◽  
pp. 382
Author(s):  
C. G. Koutroulos
Keyword(s):  
Root Mean Square ◽  
Excited States ◽  
Binding Energies ◽  
Mean Square ◽  
Relativistic Treatment

Using as an example potentials of the form U±(r)=-D±(cosh^2(r/R))^-1 the binding energies as well as the root mean square radii of the orbits of the Λ particle in hypernuclei in the ground and excited states were calculated in the relativistic and non-relativistic cases and the results are compared.

Characterization of Semiconductors and Semiconducting Superlattices Using High-Resolution Photoluminescence Spectroscopy

1985 ◽  
Vol 46 ◽  
Author(s):  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
C. W. Litton
Keyword(s):  
High Resolution ◽  
Excited States ◽  
Binding Energies ◽  
Radiative Transitions ◽  
Line Shape Analysis ◽  
Recent Developments ◽  
Defects In Semiconductors ◽  
Multi Quantum Well ◽  
Impurities And Defects

AbstractHigh resolution photoluminescence for the identification of impurities and defects in semiconductors has emerged as a powerful technique. We review the technique with emphasis on GaAs realizing that it is applicable to many different semiconductor materials. The binding energies of thle ground state and of several low-lying excited states of the impurity centers are determined by studying the radiative transitions associated with excitons bound to neutral donors or acceptors. Recent developments in the studies of GaAs-AlGaAs multi-quantum-well (MQW) structures using high resolution photoluminescence are also reported. Variations of the energies of the various transitions in MQW structures as a function of well size are presented. Estimates of the interfacial quality in these heterostructures are made from line shape analysis.

GIANT TWO-PHOTON ABSORPTION INTO EXCITED STATES OF BIEXCITON

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3765-3768
Author(s):  
I. DMITRUK ◽  
A. KASUYA ◽  
T. GOTO ◽  
Z. YANCHUK
Keyword(s):  
Absorption Spectra ◽  
Excited States ◽  
Direct Method ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Binding Energies ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
First Time

Excited states of excitonic molecule have been observed for the first time by direct method of giant two-photon absorption in monoclinic ZnP 2 single crystal. Two excited states with binding energies 3.3 meV and 1.9 meV have been observed in absorption spectra of intense picosecond laser pulses. First one corresponds to rotational excited state. Interpretation of the second one and details of nonlinear absorption spectra are discussed.

Relativistic Energy States of the A-Particle in Hypernuclei Using Gaussian Potentials

1990 ◽  
Vol 45 (1) ◽  
pp. 14-16
Author(s):  
C. G. Koutroulos
Keyword(s):  
Dirac Equation ◽  
Excited States ◽  
Ground State ◽  
Vector Potential ◽  
Scalar Potential ◽  
Binding Energies ◽  
Relativistic Energy ◽  
Gaussian Form ◽  
Fourth Component ◽  
Potential Parameters

Abstract The Dirac equation with scalar potential and fourth component of vector potential of the Gaussian form is solved numerically for potential parameters obtained by a least squares fitting of the ground state binding energies of the A in a number of hypernuclei. The binding energies in the ground and excited states for various hypernuclei are determined. The spacings between the various levels are also given

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