Compact Modeling of Independent Double-Gate MOSFET: A Physical Approach

Planar Double-Gate Transistor ◽

10.1007/978-1-4020-9341-8_3 ◽

2009 ◽

pp. 27-54

Author(s):

Daniela Munteanu ◽

Jean-Luc Autran

Keyword(s):

Compact Modeling ◽

Double Gate ◽

Physical Approach ◽

Double Gate Mosfet

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Compact Modeling of a Generic Double-Gate MOSFET With Gate–S/D Underlap for Subthreshold Operation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2208464 ◽

2012 ◽

Vol 59 (10) ◽

pp. 2846-2849 ◽

Cited By ~ 13

Author(s):

Ramesh Vaddi ◽

R. P. Agarwal ◽

S. Dasgupta

Keyword(s):

Compact Modeling ◽

Double Gate ◽

Double Gate Mosfet ◽

Subthreshold Operation

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Compact Modeling of Double Gate MOSFET for IC Design

Planar Double-Gate Transistor ◽

10.1007/978-1-4020-9341-8_4 ◽

2009 ◽

pp. 55-88

Author(s):

Marina Reyboz ◽

Olivier Rozeau ◽

Thierry Poiroux

Keyword(s):

Compact Modeling ◽

Double Gate ◽

Ic Design ◽

Double Gate Mosfet

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Quantum short-channel compact modeling of drain-current in double-gate MOSFET

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546604 ◽

2005 ◽

Cited By ~ 6

Author(s):

D. Munteanu ◽

J.-L. Autran ◽

X. Loussier ◽

S. Harrison ◽

R. Cerutti ◽

...

Keyword(s):

Drain Current ◽

Compact Modeling ◽

Double Gate ◽

Short Channel ◽

Double Gate Mosfet

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Compact modeling of long channel Double Gate MOSFET transistor

2012 24th International Conference on Microelectronics (ICM) ◽

10.1109/icm.2012.6471376 ◽

2012 ◽

Author(s):

Billel Smali ◽

Saida Latreche ◽

Samir Labiod

Keyword(s):

Compact Modeling ◽

Double Gate ◽

Double Gate Mosfet ◽

Long Channel

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The impact of high-k gate dielectric on Junctionless Vertical Double Gate MOSFET

International Journal of Computer Sciences and Engineering ◽

10.26438/ijcse/v6i6.14751478 ◽

2018 ◽

Vol 6 (6) ◽

pp. 1475-1478

Author(s):

Jagdeep Rahul

Keyword(s):

Gate Dielectric ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

The Impact ◽

High K Gate Dielectric

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Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3) ◽

10.1109/iconc345789.2020.9117425 ◽

2020 ◽

Author(s):

Gaurav Dhiman ◽

Rajeev Pourush

Keyword(s):

Work Function ◽

Double Gate ◽

Metal Gate ◽

High K ◽

Double Gate Mosfet ◽

Gate Work Function

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Compact modeling of quantum effects in symmetric double-gate MOSFETs

Microelectronics Journal ◽

10.1016/j.mejo.2010.05.007 ◽

2010 ◽

Vol 41 (10) ◽

pp. 688-692 ◽

Cited By ~ 11

Author(s):

Wei Wang ◽

Huaxin Lu ◽

Jooyoung Song ◽

Shih-Hsien Lo ◽

Yuan Taur

Keyword(s):

Quantum Effects ◽

Compact Modeling ◽

Double Gate

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Advantage of carbon nannotube field effect transistor (CNTFET) over double-gate MOSFET in nanometre regime

2012 NATIONAL CONFERENCE ON COMPUTING AND COMMUNICATION SYSTEMS ◽

10.1109/ncccs.2012.6412983 ◽

2012 ◽

Cited By ~ 2

Author(s):

Sanjeet Kumar Sinha ◽

Saurabh Chaudhury

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Double Gate Mosfet ◽

Effect Transistor

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An explicit analytical charge-based model of undoped independent double gate MOSFET

Solid-State Electronics ◽

10.1016/j.sse.2006.05.019 ◽

2006 ◽

Vol 50 (7-8) ◽

pp. 1276-1282 ◽

Cited By ~ 25

Author(s):

Marina Reyboz ◽

Olivier Rozeau ◽

Thierry Poiroux ◽

Patrick Martin ◽

Jalal Jomaah

Keyword(s):

Double Gate ◽

Double Gate Mosfet

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Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model

Advances in Intelligent Systems and Computing - Contemporary Advances in Innovative and Applicable Information Technology ◽

10.1007/978-981-13-1540-4_5 ◽

2018 ◽

pp. 41-47

Author(s):

Krishnendu Roy ◽

Anal Roy Chowdhury ◽

Arpan Deyasi ◽

Angsuman Sarkar

Keyword(s):

Surface Potential ◽

Drain Current ◽

Double Gate ◽

Double Gate Mosfet

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