Compact modeling of quantum effects in symmetric double-gate MOSFETs

In spite of progress in silicon technology, the end of Mosfet scaling can be anticipated for the year 2015 so the introduction of high permittivity gate dielectric is the envisaged solution to reduce the current leakage that drives up power consumption. In this paper we investigate the impact of different gate length on SOI double gate MOSFET when SiO2 is replaced by ZrO2 as the gate dielectric using Nextnano Simulator. The impact of the quantum effects also observed on performance parameters of the DG-MOSFET such as on current, off current, drain induced barrier lowering, and sub-threshold. It is observed that less EOT with high permittivity reduces the tunnel current and serves to maintain high drive current.

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Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2011.11.023 ◽

2012 ◽

Vol 69 ◽

pp. 72-84 ◽

Cited By ~ 19

Author(s):

Mike Schwarz ◽

Thomas Holtij ◽

Alexander Kloes ◽

Benjamín Iñíguez

Keyword(s):

Compact Modeling ◽

Double Gate ◽

Modeling Framework

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Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2006.886206 ◽

2006 ◽

Vol 53 (6) ◽

pp. 3363-3371 ◽

Cited By ~ 28

Author(s):

D. Munteanu ◽

V. Ferlet-Cavrois ◽

J. L. Autran ◽

P. Paillet ◽

J. Baggio ◽

...

Keyword(s):

Ion Irradiation ◽

Quantum Effects ◽

Heavy Ion ◽

Thin Body ◽

Double Gate ◽

Heavy Ion Irradiation

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ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS

International Journal of Nanoscience ◽

10.1142/s0219581x13500051 ◽

2013 ◽

Vol 12 (01) ◽

pp. 1350005 ◽

Cited By ~ 2

Author(s):

VIMALA PALANICHAMY ◽

N. B. BALAMURUGAN

Keyword(s):

Numerical Solutions ◽

Inversion Layer ◽

Drain Current ◽

Quantum Effects ◽

Schrodinger Equations ◽

Double Gate ◽

Schrödinger Equations ◽

Inversion Charge ◽

Physical Insight ◽

Quantum Mechanical Effects

An analytical model for double-gate (DG) MOSFETs considering quantum mechanical effects is proposed in this paper. Schrödinger and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum effects (QME) that influence the performance of DG MOSFETs. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion layer centroid, inversion charge, gate capacitance, drain current and transconductance. We systematically evaluate and analyze the parameters of DG MOSFETs considering QME. The analytical solutions are simple, accurate and provide good physical insight into the quantization caused by quantum confinement under various gate biases. The analytical results of this model are verified by comparing the data obtained with one-dimensional self-consistent numerical solutions of Poisson and Schrödinger equations known as SCHRED.

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