Imperfection-Immune Carbon Nanotube VLSI Circuits

2010 ◽  
pp. 277-305 ◽  
Author(s):  
Nishant Patil ◽  
Albert Lin ◽  
Jie Zhang ◽  
Hai Wei ◽  
H.-S. Philip Wong ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Vlsi Circuits

System Level Benchmarking with Yield-Enhanced Standard Cell Library for Carbon Nanotube VLSI Circuits

2014 ◽  
Vol 10 (4) ◽  
pp. 1-19 ◽  
Author(s):  
Shashikanth Bobba ◽  
Jie Zhang ◽  
Pierre-Emmanuel Gaillardon ◽  
H.-S. Philip Wong ◽  
Subhasish Mitra ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Vlsi Circuits ◽  
System Level ◽  
Standard Cell ◽  
Standard Cell Library ◽  
Cell Library

Carbon Nanotube Interconnects − A Promising Solution for VLSI Circuits

2016 ◽  
Vol 57 (2) ◽  
pp. 46-64 ◽  
Author(s):  
Mekala Girish Kumar ◽  
Yash Agrawal ◽  
Rajeevan Chandel
Keyword(s):  
Carbon Nanotube ◽  
Vlsi Circuits ◽  
Promising Solution

Geometry Induced Crosstalk Reduction in CNT Interconnects for VLSI Circuits

2018 ◽  
Vol 24 (8) ◽  
pp. 5778-5784
Author(s):  
P. Uma Sathyakam ◽  
Paridhi Singh ◽  
Priyamanga Bhardwaj ◽  
P. S Mallick
Keyword(s):  
Carbon Nanotube ◽  
Transmission Line ◽  
Vlsi Circuits ◽  
Delay Reduction ◽  
Capacitively Coupled ◽  
Coupling Capacitance ◽  
Crosstalk Reduction ◽  
Global Interconnects ◽  
Transmission Line Models

This paper proposes novel triangular cross sectioned geometry of carbon nanotube (CNT) bundles for crosstalk and hence, delay reduction in CNT bundle interconnects for VLSI circuits. We formulate the equivalent single conductor (ESC) transmission line models of the interconnects and show that the coupling capacitance of triangular bundle is 29% lesser than the traditionally used square bundles of carbon nanotube interconnects. We further simulate the proposed ESC models of capacitively coupled CNT bundle interconnects using Smart SPICE and find that the crosstalk induced delay of triangular interconnects is 30% lesser as compared to square bundle interconnects. The reduction in delay is found to increase as the number of CNTs increase in the bundle. From these results, we suggest that triangle cross-sectioned CNT bundles are the most suitable candidates as global interconnects.

Triangular Carbon Nanotube Bundle Interconnects for Subthreshold VLSI Circuits

2019 ◽  
Vol 48 (10) ◽  
pp. 6372-6381 ◽  
Author(s):  
P. Uma Sathyakam ◽  
P. S. Mallick
Keyword(s):  
Carbon Nanotube ◽  
Vlsi Circuits ◽  
Nanotube Bundle

Geometry-Based Crosstalk Reduction in CNT Interconnects

2019 ◽  
Vol 29 (06) ◽  
pp. 2050094 ◽  
Author(s):  
P. Uma Sathyakam ◽  
P. S. Mallick ◽  
Paridhi Singh
Keyword(s):  
Carbon Nanotube ◽  
Transmission Line ◽  
Vlsi Circuits ◽  
Delay Reduction ◽  
Capacitively Coupled ◽  
Coupling Capacitance ◽  
Propagation Delays ◽  
Crosstalk Reduction ◽  
Global Interconnects ◽  
Transmission Line Models

This paper proposes novel triangular cross-sectioned geometry of carbon nanotube (CNT) bundles for crosstalk and delay reduction in CNT bundle interconnects for VLSI circuits. First, we formulate the equivalent single conductor (ESC) transmission line models of the interconnects. Through SPICE analysis of the ESC circuits, we find the propagation delays of the proposed CNT bundles. Next, we model the capacitively coupled interconnects for crosstalk analysis. It is found that the coupling capacitance of triangular CNT bundle is 29% lesser than the traditionally used square CNT bundles. Further, the crosstalk-induced delay of triangular interconnects is found to be 30% lesser when compared to square bundle interconnects. The reduction in delay is found to increase as the number of CNTs in the bundle increases. So, we suggest that triangular CNT bundles are the most suitable candidates as global interconnects.

scholarly journals Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance

VLSI Design ◽  
2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Yao Xu ◽  
Ashok Srivastava ◽  
Ashwani K. Sharma
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Dynamic Models ◽  
Field Effect Transistors ◽  
Vlsi Circuits ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Nanometer Cmos ◽  
And Performance ◽  
Cmos Vlsi

Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects used in nanometer CMOS VLSI circuits.

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