Temperature Dependence of the Time Delay to the Onset of Film Boiling in Liquid Helium

1986 ◽  
pp. 439-446 ◽  
Author(s):  
D. Lezak ◽  
L. C. Brodie ◽  
J. S. Semura ◽  
S. M. Roberts
Keyword(s):  
Time Delay ◽  
Temperature Dependence ◽  
Liquid Helium ◽  
Film Boiling

On the time delay of the photoplastic effect

1986 ◽  
Vol 1 (1) ◽  
pp. 3-6 ◽  
Author(s):  
Joseph Pellegrino ◽  
J. M. Galligan
Keyword(s):  
Time Delay ◽  
Temperature Dependence ◽  
Cadmium Telluride ◽  
Deformation Temperature ◽  
Mercury Cadmium Telluride ◽  
Charge Carriers ◽  
Temperature Dependent ◽  
Simple Analysis ◽  
Photoplastic Effect

Photoplasticity in mercury cadmium telluride, Hg1-x Cdx Te with x = 0.3, has been studied as a function of light frequency and deformation temperature. We show that there is an easily measurable time delay accompanying irradiation of the crystal and the change in stress. This time delay is temperature dependent, suggesting a diffusion of charge carriers, introduced by the light, to the interior of the crystal. A simple analysis is given of the observed temperature dependence that is consistent with the experiments.

42. Measurements of the temperature dependence of the excitation spectrum of liquid helium

Physica ◽  
1958 ◽  
Vol 24 ◽  
pp. S146 ◽  
Author(s):  
J. Yarnell Bendt ◽  
E.C. Kerr ◽  
Arnold
Keyword(s):  
Temperature Dependence ◽  
Liquid Helium ◽  
Excitation Spectrum

The influence of nucleate to film boiling transition in liquid helium on the stability of composite superconductors under ac conditions

Cryogenics ◽  
1981 ◽  
Vol 21 (9) ◽  
pp. 555-558 ◽  
Author(s):  
V.A. Altov ◽  
E.V. Blagov ◽  
N.A. Kulysov ◽  
V.V. Sytchev
Keyword(s):  
Liquid Helium ◽  
Film Boiling ◽  
Composite Superconductors ◽  
The Stability

Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

2010 ◽  
Vol 18 (4) ◽  
Author(s):  
M.S. Ab Rahman ◽  
M.R. Hassan
Keyword(s):  
Time Delay ◽  
Temperature Dependence ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
Communication Systems ◽  
Recombination Coefficient ◽  
Turn On ◽  
Proposed Model ◽  
Wide Range ◽  
Dc Bias

AbstractTemperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.

Temperature dependence of the neutral current in liquid helium

1975 ◽  
Vol 20 (3-4) ◽  
pp. 365-371 ◽  
Author(s):  
W. Holcomb ◽  
J. W. Halley
Keyword(s):  
Temperature Dependence ◽  
Liquid Helium ◽  
Neutral Current
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