Silicon Carbide High Temperature MEMS Capacitive Strain Sensor

2012 ◽  
pp. 1-9
Author(s):  
R. P. Weisenberger ◽  
R. A. Coutu ◽  
LaVern A. Starman
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Strain Sensor ◽  
Capacitive Strain

DURALCAN F3S.xxS

Alloy Digest ◽  
1994 ◽  
Vol 43 (10) ◽  
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Compressive Strength ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Base Alloy ◽  
Alloy Matrix ◽  
Reinforced Composite ◽  
Temperature Performance ◽  
Aluminum Alloy Matrix

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.

A Highly Stable and Durable Capacitive Strain Sensor Based on Dynamically Super‐Tough Hydro/Organo‐Gels

2021 ◽  
pp. 2010830
Author(s):  
Funian Mo ◽  
Yan Huang ◽  
Qing Li ◽  
Zifeng Wang ◽  
Ruijuan Jiang ◽  
...  
Keyword(s):  
Strain Sensor ◽  
Capacitive Strain

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

New Generation of SiC Based Biodevices Implemented on 4” Wafers

2010 ◽  
Vol 645-648 ◽  
pp. 1097-1100 ◽  
Author(s):  
Phillippe Godignon ◽  
Iñigo Martin ◽  
Gemma Gabriel ◽  
Rodrigo Gomez ◽  
Marcel Placidi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Carbide ◽  
High Temperature ◽  
Temperature Sensors ◽  
Biomedical Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
New Generation ◽  
Growth Technology ◽  
Biosensor Applications

Silicon Carbide is mainly used for power semiconductor devices fabrication. However, SiC material also offers attractive properties for other types of applications, such as high temperature sensors and biomedical devices. Micro-electrodes arrays are one of the leading biosensor applications. Semi-insulating SiC can be used to implement these devices, offering higher performances than Silicon. In addition, it can be combined with Carbon Nanotubes growth technology to improve the devices sensing performances. Other biosensors were SiC could be used are microfluidic based devices. However, improvement of SiCOI starting material is necessary to fulfill the typical requirements of such applications.

Integrated circuits in silicon carbide for high-temperature applications

MRS Bulletin ◽  
2015 ◽  
Vol 40 (5) ◽  
pp. 431-438 ◽  
Author(s):  
Carl-Mikael Zetterling
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Image Position ◽  
Temperature Applications

Abstract

High temperature creep of silicon carbide particulate reinforced aluminum

1990 ◽  
Vol 38 (11) ◽  
pp. 2149-2159 ◽  
Author(s):  
Kyung-Tae Park ◽  
Enrique J. Lavernia ◽  
Farghalli A. Mohamed
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Temperature Creep ◽  
Temperature Creep ◽  
Silicon Carbide Particulate ◽  
Particulate Reinforced

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

Sign in / Sign up

Export Citation Format

Share Document