High-Frequency Impedance Measurement of Electronic Devices Using a De-embedding Technique

2013 ◽  
pp. 393-401
Author(s):  
C. Kasmi ◽  
M. Hélier ◽  
M. Darces ◽  
E. Prouff
Keyword(s):  
High Frequency ◽  
Electronic Devices ◽  
Impedance Measurement ◽  
Embedding Technique

scholarly journals Review on the Millimeter-Wave Generation Techniques Based on Photon Assisted for the RoF Network System

2020 ◽  
Vol 2020 ◽  
pp. 1-14
Author(s):  
Jiangnan Xiao ◽  
Chuang Zhao ◽  
Xingxing Feng ◽  
Xu Dong ◽  
Jiangli Zuo ◽  
...  
Keyword(s):  
High Frequency ◽  
Low Cost ◽  
Electronic Devices ◽  
Low Frequency ◽  
Digital Signal ◽  
Development Trend ◽  
Wave Generation ◽  
Communication Link ◽  
Network System ◽  
High Frequency Microwave

With the development trend of wireless and broadband in the communication link and even the whole information industry, the demand of high-frequency microwave bandwidth has been increasing. The RoF network system solves the problem of spectrum congestion in low-frequency band by providing an effective technology for the distribution of high-frequency microwave signals over optical fiber links. However, the traditional mm-wave generation technique is limited by the bandwidth of electronic devices. It is difficult to generate high-frequency and low-phase noise mm-wave signals with pure electrical components. The mm-wave communication technology based on photon assisted can overcome the bandwidth bottleneck of electronic devices and provide the potential for developing the low-cost infrastructure demand of broadband mobile services. This paper will briefly explain the characteristics of the RoF network system and the advantages of high-frequency mm-wave. Then we, respectively, introduce the modulation schemes of RoF mm-wave generation based on photon assisted including directly modulated laser (DML), external modulation, and optical heterodyne. The review mainly focuses on a variety of different mm-wave generation technologies including multifrequency vector mm-wave. Furthermore, we list several approaches to realize the large capacity data transmission techniques and describe the digital signal processing (DSP) algorithm flow in the receiver. In the end, we summarize the RoF network system and look forward to the future.

EFFECTS OF ELECTRODE RESISTANCE ON THE DIELECTRIC BEHAVIORS OF Au/BaxSr1−xTiO3/La1.1Sr0.9NiO4 CAPACITORS

2016 ◽  
Vol 23 (04) ◽  
pp. 1650028
Author(s):  
JIE QIU ◽  
GUOZHEN LIU ◽  
JÉRÔME WOLFMAN
Keyword(s):  
Frequency Dependence ◽  
High Frequency ◽  
Electronic Devices ◽  
Equivalent Circuit Model ◽  
Simulation Studies ◽  
Oxide Electrode ◽  
Theoretical Simulation ◽  
High Frequencies ◽  
Electrode Resistance ◽  
Apparent Deviation

BaxSr[Formula: see text]TiO3 ([Formula: see text]) (BST) thin films were prepared on La[Formula: see text]Sr[Formula: see text]NiO4 (LSNO)/SrTiO3 (STO) structure by combinatorial pulsed laser deposition (comb-PLD). The capacitances of the Au/BST/LSNO capacitors exhibited strong frequency dependence especially when the applied frequency was higher than 10[Formula: see text]kHz. On the basis of an equivalent circuit model, we presented a theoretical simulation of the relationships between capacitance and frequency for the capacitors with different electrode serial resistances. Based on the fitting results, the observed strong frequency dependence of the measured capacitance at high frequency in our study could be ascribed to the large serial resistance of 750 [Formula: see text] for oxide electrode LSNO. Further simulation studies found that large serial resistance (1000 [Formula: see text]) could result in an apparent deviation from the intrinsic dielectric properties especially at high frequencies ([Formula: see text]100[Formula: see text]kHz) for capacitors with capacitances above 1[Formula: see text]nF. Our results provide useful information for the design of all-oxide electronic devices.

scholarly journals Big Data as a Source for Official Statistics

2015 ◽  
Vol 31 (2) ◽  
pp. 249-262 ◽  
Author(s):  
Piet J.H. Daas ◽  
Marco J. Puts ◽  
Bart Buelens ◽  
Paul A.M. van den Hurk
Keyword(s):  
Big Data ◽  
High Frequency ◽  
Electronic Devices ◽  
Point Of View ◽  
Data Sources ◽  
The Internet ◽  
Official Statistics ◽  
Daily Lives ◽  
Media Messages ◽  
Loop Detection

Abstract More and more data are being produced by an increasing number of electronic devices physically surrounding us and on the internet. The large amount of data and the high frequency at which they are produced have resulted in the introduction of the term ‘Big Data’. Because these data reflect many different aspects of our daily lives and because of their abundance and availability, Big Data sources are very interesting from an official statistics point of view. This article discusses the exploration of both opportunities and challenges for official statistics associated with the application of Big Data. Experiences gained with analyses of large amounts of Dutch traffic loop detection records and Dutch social media messages are described to illustrate the topics characteristic of the statistical analysis and use of Big Data.

scholarly journals Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

2020 ◽  
Vol 15 (55) ◽  
pp. 316-326
Author(s):  
Dianhao Zhang ◽  
Xiao-guang Huang ◽  
Bin-liang Cheng ◽  
Neng Zhang
Keyword(s):  
Finite Element ◽  
Fatigue Life ◽  
Thermal Fatigue ◽  
High Frequency ◽  
Fatigue Behavior ◽  
Electronic Devices ◽  
Power Module ◽  
Thermomechanical Model ◽  
Thermal Fatigue Life ◽  
Solder Layer

Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.

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