high frequency microwave
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2021 ◽  
Vol 118 (1) ◽  
pp. 012405
Author(s):  
W. Zhang ◽  
Y. Zhang ◽  
B. Jiang ◽  
B. Fang ◽  
H. Zhong ◽  
...  

Measurement ◽  
2021 ◽  
Vol 167 ◽  
pp. 108160
Author(s):  
Andrzej Kruk ◽  
Jakub Sorocki ◽  
Ilona Piekarz ◽  
Dominika Madej ◽  
Piotr Kolenderski

2020 ◽  
Vol 2020 ◽  
pp. 1-14
Author(s):  
Jiangnan Xiao ◽  
Chuang Zhao ◽  
Xingxing Feng ◽  
Xu Dong ◽  
Jiangli Zuo ◽  
...  

With the development trend of wireless and broadband in the communication link and even the whole information industry, the demand of high-frequency microwave bandwidth has been increasing. The RoF network system solves the problem of spectrum congestion in low-frequency band by providing an effective technology for the distribution of high-frequency microwave signals over optical fiber links. However, the traditional mm-wave generation technique is limited by the bandwidth of electronic devices. It is difficult to generate high-frequency and low-phase noise mm-wave signals with pure electrical components. The mm-wave communication technology based on photon assisted can overcome the bandwidth bottleneck of electronic devices and provide the potential for developing the low-cost infrastructure demand of broadband mobile services. This paper will briefly explain the characteristics of the RoF network system and the advantages of high-frequency mm-wave. Then we, respectively, introduce the modulation schemes of RoF mm-wave generation based on photon assisted including directly modulated laser (DML), external modulation, and optical heterodyne. The review mainly focuses on a variety of different mm-wave generation technologies including multifrequency vector mm-wave. Furthermore, we list several approaches to realize the large capacity data transmission techniques and describe the digital signal processing (DSP) algorithm flow in the receiver. In the end, we summarize the RoF network system and look forward to the future.


2020 ◽  
Vol 12 (20) ◽  
pp. 3441
Author(s):  
Cezar Kongoli ◽  
Huan Meng ◽  
Jun Dong ◽  
Ralph Ferraro

This paper explores the capability of high frequency microwave measurements at vertical and horizontal polarizations in detecting snowfall over land. Surface in-situ meteorological data were collected over Conterminous US during two winter seasons in 2014–2015 and 2015–2016. Statistical analysis of the in-situ data, matched with Global Precipitation Measurement (GPM) Microwave Imager (GMI) measurements on board NASA/JAXA Core Observatory, showed that the polarization difference at 166 GHz had the highest correlation to measured snowfall rate compared to the single channel high frequency measurements and the polarization difference at 89 GHz. A logistic regression model applied to the match-up data, using the polarization difference at 166 and 89 GHz as predictors, yielded an overall snowfall classification rate of 69.0%, with the largest contribution coming from the polarization difference at 166 GHz. Logistic regression using the four single channels as predictors (at 89 and 166 GHz, horizontal and vertical polarizations) further indicated that the horizontal polarization at 166 GHz was the most important contributor. An overall classification rate of 73% was achieved by including the 183.31 ± 3 GHz and 183.31 ± 7 GHz vertical polarization channels in the final logistic regression model. Evaluation of the final algorithm demonstrated skill in snowfall detection of two significant events.


Author(s):  
Sergey Redkin ◽  
◽  
Petr Maltsev ◽  
Sergey Gamkrelidze

A basic technology for cubic silicon carbide (3C-SiC) formation on silicon (Si) plates in high-frequency (HF and HFI) and very-high-frequency (microwave) discharges at low pressure has been developed. It is found that 3C-SiC layers formation on Si should be multiple staged, but integrated, i.e. sequential change of stages should be performed without working chamber deevacuating and accompanied only by changing modes, gaseous media and applying electrical displacement. The following technological mixtures have been proposed: SiF4 + CF4 + Ar; SiF4 + CH4 + Ar.


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