A Study of Thermally Activated Conduction, Hall Effect and Infra-Red Absorption from the Impurity Band in n-InP

1985 ◽  
pp. 705-708
Author(s):  
T. H. H. Vuong ◽  
R. J. Nicholas
Keyword(s):  
Hall Effect ◽  
Impurity Band ◽  
Thermally Activated ◽  
Infra Red

The optical and electronic properties of semiconducting diamond

1993 ◽  
Vol 342 (1664) ◽  
pp. 233-244 ◽  
Keyword(s):  
Absorption Spectrum ◽  
Electronic Properties ◽  
Valence Band ◽  
Chemical Vapour ◽  
Impurity Band ◽  
Thermally Activated ◽  
Boron Doped ◽  
Optical And Electronic Properties ◽  
Temperature Dependences ◽  
Semiconducting Diamond

In this paper I review the evidence that shows that the optical and electronic properties of semiconducting diamond can be understood in terms of boron acceptors partially compensated by deep donors. In natural semiconducting diamond, in which the total impurity concentration is less than 1 ppm, there is a lot of fine structure in the acceptor absorption spectrum that is not fully understood, and the electrical conductivity is primarily associated with the thermally activated excitation of holes from the acceptor ground state to the valence band. Some of the problems regarding the analysis of Hall effect data in this material are discussed, including the temperature dependences of the scattering mechanisms, of the contribution from the split-off valence band and of the population of excited states. There are no adequate theoretical descriptions of any of these processes, and this leads to some uncertainties in the values of the parameters derived from the temperature dependence of the Hall coefficient. For boron-doped synthetic diamond, and thin film diamond grown by chemical vapour deposition (CVD), the defect concentrations are generally much higher, and much more inhomogeneous, than in natural semiconducting diamond. This results in a substantial broadening of the acceptor absorption spectrum and the electronic properties are greatly modified by increasing contributions from impurity band conduction as the acceptor concentrations are increased, leading to very low mobility values. For both poly crystalline and single crystal homoepitaxial CVD diamond, measurements of the electrical properties can be completely invalidated by the presence of a surface layer of non-diamond carbon.

Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

1997 ◽  
Vol 468 ◽  
Author(s):  
W. Götz ◽  
M. D. McCluskey ◽  
N. M. Johnson ◽  
D. P. Bour ◽  
E. E. Haller
Keyword(s):  
Hall Effect ◽  
Absorption Spectra ◽  
Thermal Activation ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Thermally Activated ◽  
Local Vibrational Mode ◽  
Hall Effect Measurements ◽  
Spectroscopic Identification ◽  
Mg Doped

ABSTRACTMg-doped GaN films grown by metalorganic chemical vapor deposition were characterized by variable-temperature Hall-effect measurements and Fourier-transform infrared absorption spectroscopy. As-grown, thermally activated, and deuterated Mg-doped GaN samples were investigated. The existence of Mg-H complexes in GaN is demonstrated with the observation of a local vibrational mode (LVM) at 3125 cm-1 (8 K). At 300 K this absorption line shifts to 3122 cm-1. The intensity of the LVM line is strongest in absorption spectra of as-grown GaN. Mg which is semi-insulating. Upon thermal activation, the intensity of the LVM line significantly decreases and an acceptor concentration of 2×1019cm-3 is derived from the Hall-effect data. After deuteration at 600°C the resistivity of the Mg-doped GaN increased by four orders of magnitude. A LVM line at 2321 cm-1 (8 K) appears in the absorption spectra which is consistent with the isotopie shift of the vibrational frequency when D is substituted for H.

scholarly journals Thermally activated energy and flux-flow Hall effect ofFe1+y(Te1+xSx)z

2010 ◽  
Vol 82 (13) ◽  
Author(s):  
Hechang Lei ◽  
Rongwei Hu ◽  
E. S. Choi ◽  
C. Petrovic
Keyword(s):  
Hall Effect ◽  
Flux Flow ◽  
Thermally Activated

scholarly journals Температурная активация электронов проводимости в двойной квантовой яме HgTe/CdHgTe p-типа проводимости со слоями HgTe критической толщины

2019 ◽  
Vol 53 (7) ◽  
pp. 935
Author(s):  
С.М. Подгорных ◽  
М.В. Якунин ◽  
С.С. Криштопенко ◽  
М.Р. Попов ◽  
Н.Н. Михайлов ◽  
...  
Keyword(s):  
Hall Effect ◽  
Critical Thickness ◽  
Quantum Hall ◽  
Double Quantum ◽  
Thermally Activated ◽  
Double Quantum Well ◽  
Temperature Dependences ◽  
P Type ◽  
The Magnetic Field ◽  
Lateral Maximum

AbstractThe temperature dependences of the Hall coefficient and magnetoresistivity of a p -type HgTe/CdHgTe double quantum well with HgTe layers of critical thickness in the temperature range T = 35–300 K under magnetic fields up to 9 T are investigated. The position of the earlier observed reentrant quantum Hall transition from plateau i = 1 to plateau i = 2 is found to be close to the transition field from light to heavy holes with an increase in the magnetic field in the classical Hall effect. It is found that thermally activated light electrons contribute to the Hall effect along with light and heavy holes at T ≥ 35 K. The activation energy of electrons is estimated from the temperature dependence of the electron concentration as 28 meV, which exceeds the calculated value from the lateral maximum of the valence subband to the edge of the lowest conduction subband, probably because of heterostructure asymmetry.

DENSITY OF STATES AND CHARGE DISTRIBUTION IN LIGHTLY DOPED AND COMPENSATED QUANTUM WELL

1989 ◽  
Vol 03 (11) ◽  
pp. 815-819
Author(s):  
E.A. DE ANDRADA E SILVA ◽  
I.C. DA CUNHA LIMA
Keyword(s):  
Quantum Well ◽  
Charge Distribution ◽  
Density Of States ◽  
Impurity Band ◽  
Band Model ◽  
Two Dimensional ◽  
Bohr Radius ◽  
Coulomb Gap ◽  
Bulk Semiconductors ◽  
Infra Red

In this letter we use a Semi-Classical Impurity Band Model and obtain by Monte Carlo simulation the density of states (DOS) and the impurity charge distribution inside a quantum well (QW) of Ga 1−x Al x As/GaAs . We show the existence of a Coulomb gap as has been observed in bulk semiconductors. The DOS is not very sensitive to the QW width close to the Coulomb gap, at least in the range from 1 to 4 times the Bohr radius, and shows a behavior D(E)∝|E−EF| which indicates a two-dimensional signature. We show that the neutral donors concentrate in the center of the well according to a distribution whose width and decay rate depend on the compensation and impurity concentration respectively. Those effects are expected to be observed by infra-red absorption experiments and useful in device diagnosis.

Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

1994 ◽  
Vol 354 ◽  
Author(s):  
L. Simon ◽  
A. Mesu ◽  
J. J. Grob ◽  
T. Heiser ◽  
J. L. Balladore
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
Thin Layer ◽  
Point Defects ◽  
Ion Beam ◽  
Limiting Factor ◽  
Thermally Activated ◽  
Infra Red ◽  
Thermally Activated Process

AbstractWe report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm . RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

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