In Situ Epitaxial Growth of the Gd-Ba-Cu-O Superconducting Thin Films on (100) LaAlO3 by Dc-Magnetron Sputtering Using Single Planar Target

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

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DC magnetron sputtering of high Tc superconducting thin films

Solid State Communications ◽

10.1016/0038-1098(87)90692-2 ◽

1987 ◽

Vol 64 (5) ◽

pp. 749-751 ◽

Cited By ~ 5

Author(s):

D.S. Burbidge ◽

S.K. Dew ◽

B.T. Sullivan ◽

N. Fortier ◽

R.R. Parsons ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Superconducting Thin Films ◽

Dc Magnetron Sputtering ◽

High Tc

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Bi‐Sr‐Ca‐Cu‐oxide superconducting thin films deposited by dc magnetron sputtering

Applied Physics Letters ◽

10.1063/1.99598 ◽

1988 ◽

Vol 52 (23) ◽

pp. 1992-1994 ◽

Cited By ~ 39

Author(s):

Brian T. Sullivan ◽

N. R. Osborne ◽

W. N. Hardy ◽

J. F. Carolan ◽

B. X. Yang ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Superconducting Thin Films ◽

Dc Magnetron Sputtering

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Critical current density in GdBaCuO superconducting thin films prepared by d.c. magnetron sputtering using a single planar target

Cryogenics ◽

10.1016/0011-2275(90)90177-e ◽

1990 ◽

Vol 30 (5) ◽

pp. 455-457 ◽

Cited By ~ 7

Author(s):

H.C. Li ◽

R.L. Wang ◽

C.G. Cui ◽

X.S. Ron ◽

B. Yin ◽

...

Keyword(s):

Thin Films ◽

Critical Current Density ◽

Magnetron Sputtering ◽

Critical Current ◽

Current Density ◽

Superconducting Thin Films ◽

Planar Target

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In Situ Epitaxial Growth of Superconducting $\bf Bi_2-Sr_2-Ca_{\ninmb n-1}-Cu_n-O_{\ninmb y}$ ( n=1, 2) Thin Films by Two-Target Magnetron Sputtering under High Pressure

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.5579 ◽

1995 ◽

Vol 34 (Part 1, No. 10) ◽

pp. 5579-5584 ◽

Cited By ~ 1

Author(s):

Shin-ichi Karimoto ◽

Keiichi Tanabe ◽

Shugo Kubo ◽

Koji Tsuru ◽

Minoru Suzuki

Keyword(s):

Thin Films ◽

High Pressure ◽

Magnetron Sputtering ◽

Epitaxial Growth

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Adhesion Study in Aluminum/Polyimide System

MRS Proceedings ◽

10.1557/proc-511-377 ◽

1998 ◽

Vol 511 ◽

Cited By ~ 4

Author(s):

S. H. Yoo ◽

S. J. Heo ◽

Y.-H. Kim ◽

B. J. Han ◽

J. H. Yoon

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Plasma Treatment ◽

Peel Strength ◽

Rf Plasma ◽

Dc Magnetron Sputtering ◽

Curing Conditions ◽

Curing Condition ◽

Pi System

ABSTRACTThe effects of RF plasma precleaning and polyimide curing conditions on the peel strength have been studied. polyimide precursors of BG-2480 (Toray) and PI-2611 (Du Pont) were spincoated and cured under the various conditions. Cured polyimide substrates were in-situ Ar+ RF plasma cleaned prior to metal deposition. Al-2%Si or Al-0.5%Cu-1%Si thin films were deposited onto polyimide substrates using DC magnetron sputtering.The peel strength was enhanced by RF plasma treatment. The Al/modified PI specimen failed cohesively in the polyimide. The polyimide curing condition strongly affects the peel strength in the Al/modified PI system.

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