Orientation Dependence of Critical Currents in a-Axis Oriented YBCO Thin Films

Author(s):  
X. K. Wang ◽  
D. X. Li ◽  
S. N. Song ◽  
J. Q. Zheng ◽  
R. P. H. Chang ◽  
...  
1994 ◽  
Vol 235-240 ◽  
pp. 3095-3096
Author(s):  
F. Ichikawa ◽  
T. Nishizaki ◽  
K. Yamabe ◽  
Y. Yamasaki ◽  
T. Fukami ◽  
...  

1995 ◽  
Vol 10 (1) ◽  
pp. 11-17 ◽  
Author(s):  
A. Cassinese ◽  
A. Di Chiara ◽  
F. Miletto Granozio ◽  
S. Saiello ◽  
U. Scotti di Uccio ◽  
...  

High-quality YBCO thin films have been grown by Inverted Cylindrical Magnetron Sputtering (ICMS) on LaAlO3(100), SrTiO3(100), SrTiO3(110), and MgO(100) substrates. Transition temperatures of c-axis films exceed 90 K, and transition widths are within 1 K. Critical currents range up to 5 × 106 A/cm2 at 77 K. Structural and morphological features analyzed by x-ray diffraction and scanning electron microscopy, respectively, are found to be strongly dependent on film orientation and deposition temperature. In order to understand such dependence, a simple interpretation is proposed in terms of Gibbs energies and growth dynamics of the nucleation process.


1994 ◽  
Vol 235-240 ◽  
pp. 3061-3062 ◽  
Author(s):  
G. Garz ◽  
T. Schild ◽  
N. Bouadma ◽  
F.R. Ladan ◽  
P. Gabelotaud ◽  
...  

Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).


Author(s):  
O. Eibl ◽  
G. Gieres ◽  
H. Behner

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.


1989 ◽  
Vol 50 (C5) ◽  
pp. C5-149-C5-153
Author(s):  
DING-KUN PENG ◽  
GUANG-YAO MENG ◽  
CHUN-BAO CAO ◽  
CHUN-LIN WANG ◽  
QI FANG ◽  
...  
Keyword(s):  
High Tc ◽  

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Tetsuro Sueyoshi ◽  
Ryusei Enokihata ◽  
Hiroshi Yamaguchi ◽  
Takanori Fujiyoshi ◽  
Yasuki Okuno ◽  
...  

2016 ◽  
Vol 29 (6) ◽  
pp. 1483-1489 ◽  
Author(s):  
S. Aghabagheri ◽  
M. R. Mohammadizadeh ◽  
P. Kameli ◽  
H. Salamati

1989 ◽  
Vol 169 ◽  
Author(s):  
X.K. Wang ◽  
D.X. Li ◽  
S.N. Song ◽  
J.Q. Zheng ◽  
R.P.H. Chang ◽  
...  

AbstractEpitaxial thin films of YBaCuO were prepared by multilayer deposition from Y, Cu, and BaF2 sources with: (1) the a‐axis perpendicular to (100)SrTiO3; (2) the c‐axis perpendicular to (100)SrTiO3; and (3) the [110] axis perpendicular to (110)SrTiO3. XRD patterns as well as SEM and HREM images confirm that the films are highly oriented, essentially epitaxial. Both the a‐axis oriented and the c‐axis oriented films exhibit zero resistance at 91K. The [110] oriented film shows the sharpest transiton with a transition width of IK and zero resistance at 85K. The zero field critical current density, Jc, determined magnetically, is in excess of 107A/cm2 at 4.4K and 1.04 x 106A/cm2 at 77K for the c‐axis oriented film; for the a‐axis oriented film we obtained 6.7 x 106A/cm2 at 4.4K and 1.2 x 105A/cm2 at 77K. The orientation dependence of the critical current density in the basal plane of the a‐axis oriented film was studied. The largest Jc's occur along the in‐plane <100> axes of the substrate.


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