RF Plasma Deposition of YBa2Cu3O7−x Films

1990 ◽  
pp. 99-107
Author(s):  
S. Patel ◽  
A. Shah ◽  
D. T. Shaw
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma

RF Plasma Deposition of a-C:H Films: Diagnostics and Modeling

1991 ◽  
pp. 307-312 ◽  
Author(s):  
V. Barbarossa ◽  
O. Martini ◽  
S. Mercuri ◽  
R. Tomaciello ◽  
F. Galluzzi
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma

RF plasma deposition of SiO2-like films: plasma phase diagnostics and gas barrier film properties optimisation

2001 ◽  
Vol 142-144 ◽  
pp. 163-168 ◽  
Author(s):  
Mariadriana Creatore ◽  
Fabio Palumbo ◽  
Riccardo d'Agostino ◽  
Pierre Fayet
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma ◽  
Film Properties ◽  
Gas Barrier ◽  
Plasma Phase ◽  
Barrier Film

Effect of RF plasma deposition parameters on Y1Ba2Cu3O7−x thin films

1991 ◽  
Author(s):  
A. Shah ◽  
E. Narumi ◽  
J. Schutkeker ◽  
S. Patel ◽  
D. T. Shaw
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Rf Plasma ◽  
Deposition Parameters

Structural Stability of Si-O-a-C:H/Si-a-C:H Layered Systems

1996 ◽  
Vol 434 ◽  
Author(s):  
U. Müller ◽  
R. Hauert
Keyword(s):  
Structural Changes ◽  
Plasma Deposition ◽  
Temperature Stability ◽  
High Hardness ◽  
Interface Layer ◽  
Amorphous Structure ◽  
Carbon Films ◽  
Rf Plasma ◽  
Chemical Inertness ◽  
Amorphous Hydrogenated Carbon

AbstractAmorphous hydrogenated carbon films are of technological interest as protection coatings due to their special properties such as high hardness, chemical inertness, electrical insulation and infrared transparency. However, some applications still suffer from the poor thermal stability and adhesion problems of these coatings. To ensure good adhesion, especially on hardened steels and non-carbide forming substrates, an extra interlayer has to be deposited first. Often a silicon containing interlayer, Si-a-C:H for example, is used for this purpose. This Si-a-C:H interface layer was deposited by rf plasma deposition from tetramethylsilane. Then a-C:H films containing Si-O with a varying silicon content were produced from a mixture of acetylene and hexamethyldisiloxane. The structural changes upon annealing of these films were investigated using Raman spectroscopy. The analysis of the development of the different peaks upon annealing temperature reveals the transition from the amorphous structure to the more graphitic-like structure. This transition temperature increases by as much as 100°C when silicon is incorporated into the DLC film. However, when Si-O is incorporated instead of only silicon the same increase in temperature stability is observed.

Control of stress and delamination in single and multi-layer carbon thin films prepared by cathodic arc and RF plasma deposition and implantation

2006 ◽  
Vol 200 (22-23) ◽  
pp. 6405-6408 ◽  
Author(s):  
Peter C.T. Ha ◽  
D.R. McKenzie ◽  
M.M.M. Bilek ◽  
E.D. Doyle ◽  
D.G. McCulloch ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Rf Plasma ◽  
Carbon Thin Films ◽  
Cathodic Arc

Some optical properties of amorphous hydrogenated carbon thin films prepared by rf plasma deposition using methane

2001 ◽  
Vol 32 (9) ◽  
pp. 783-786 ◽  
Author(s):  
Marco A.R. Alves ◽  
Jônatas F. Rossetto ◽  
Olga Balachova ◽  
Edmundo da Silva Braga ◽  
Lucila Cescato
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Plasma Deposition ◽  
Rf Plasma ◽  
Carbon Thin Films ◽  
Amorphous Hydrogenated Carbon

A Study on the Residual Stress of Diamond-Like Carbon Films Deposited by Magnetically Enhanced RF PECVD

1996 ◽  
Vol 441 ◽  
Author(s):  
Woon Choi ◽  
Dong-Hoon Shin ◽  
Seoung-Eui Nam ◽  
Hyoung-June Kim
Keyword(s):  
Plasma Deposition ◽  
Flux Ratio ◽  
Carbon Films ◽  
Film Stress ◽  
Stress Generation ◽  
Rf Plasma ◽  
Process Conditions ◽  
Working Pressure ◽  
Rapid Reduction ◽  
Ion Energy

AbstractHydrogenated DLC films were synthesized by RF plasma deposition with and without magnetic enhancement, and their film stresses were investigated as a function of process parameters. Under investigated process conditions, Vb/P1/2 (where Vb is the self-bias voltage and P is the working pressure) is the appropriate scaling factor representing impinging ion energy. Film stress is influenced by not only ion impinging energy but also by ion to adspecies flux ratios. As ion energy increases, film stresses increase to a maximum value corresponding to the highest number of sp3 carbon bonds. As ion/adspecies flux ratio increases, the maximum stress value decreases and the corresponding ion energy increases. Induction of a magnetic field promotes film stresses as high as 15.2 GPa, which is one of the highest value reported in hydrogenated DLC films. The magnetic-induced increase of stress can be explained by increased ion/adspecies flux ratio, thus, enhanced sp3 formation. Rapid reduction of stresses observed at high ion energies may stem from the formation of graphite (sp2 bond) phases. Inclusion of hydrogen in the films is not directly responsible for the stress generation.

scholarly journals Dust Particle Diagnostics in Rf Plasma Deposition of Silicon and Silicon Oxide Films (Invited)

1998 ◽  
Vol 507 ◽  
Author(s):  
Ch. Hollenstein ◽  
A. A. Howling ◽  
C. Courteille ◽  
J.-L. Dorier ◽  
L. Sansonnens ◽  
...  
Keyword(s):  
Mass Spectra ◽  
Silicon Oxide ◽  
Plasma Deposition ◽  
Cluster Formation ◽  
Plasma Chemistry ◽  
Random Model ◽  
Rf Plasma ◽  
Particle Contamination ◽  
The Rich ◽  
Measured Mass

ABSTRACTParticle contamination formed in reactive plasmas imposes an upper limit on the rate for particle-free deposition. Conversely, these plasmas could be exploited to produce nanometric clusters and particles for various applications. Infrared absorption spectroscopy has been applied to analyse the chemical composition of suspended particles. Mass spectrometry was also used to investigate cluster formation in these deposition plasmas. In pure silane plasmas, a random model reproduces the measured mass spectra, whereas the rich plasma chemistry in silane/oxygen mixtures shows a remarkable tendency to produce silasesquioxane anions.

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