A Study on the Residual Stress of Diamond-Like Carbon Films Deposited by Magnetically Enhanced RF PECVD

1996 ◽  
Vol 441 ◽  
Author(s):  
Woon Choi ◽  
Dong-Hoon Shin ◽  
Seoung-Eui Nam ◽  
Hyoung-June Kim
Keyword(s):  
Plasma Deposition ◽  
Flux Ratio ◽  
Carbon Films ◽  
Film Stress ◽  
Stress Generation ◽  
Rf Plasma ◽  
Process Conditions ◽  
Working Pressure ◽  
Rapid Reduction ◽  
Ion Energy

AbstractHydrogenated DLC films were synthesized by RF plasma deposition with and without magnetic enhancement, and their film stresses were investigated as a function of process parameters. Under investigated process conditions, Vb/P1/2 (where Vb is the self-bias voltage and P is the working pressure) is the appropriate scaling factor representing impinging ion energy. Film stress is influenced by not only ion impinging energy but also by ion to adspecies flux ratios. As ion energy increases, film stresses increase to a maximum value corresponding to the highest number of sp3 carbon bonds. As ion/adspecies flux ratio increases, the maximum stress value decreases and the corresponding ion energy increases. Induction of a magnetic field promotes film stresses as high as 15.2 GPa, which is one of the highest value reported in hydrogenated DLC films. The magnetic-induced increase of stress can be explained by increased ion/adspecies flux ratio, thus, enhanced sp3 formation. Rapid reduction of stresses observed at high ion energies may stem from the formation of graphite (sp2 bond) phases. Inclusion of hydrogen in the films is not directly responsible for the stress generation.

Structural Stability of Si-O-a-C:H/Si-a-C:H Layered Systems

1996 ◽  
Vol 434 ◽  
Author(s):  
U. Müller ◽  
R. Hauert
Keyword(s):  
Structural Changes ◽  
Plasma Deposition ◽  
Temperature Stability ◽  
High Hardness ◽  
Interface Layer ◽  
Amorphous Structure ◽  
Carbon Films ◽  
Rf Plasma ◽  
Chemical Inertness ◽  
Amorphous Hydrogenated Carbon

AbstractAmorphous hydrogenated carbon films are of technological interest as protection coatings due to their special properties such as high hardness, chemical inertness, electrical insulation and infrared transparency. However, some applications still suffer from the poor thermal stability and adhesion problems of these coatings. To ensure good adhesion, especially on hardened steels and non-carbide forming substrates, an extra interlayer has to be deposited first. Often a silicon containing interlayer, Si-a-C:H for example, is used for this purpose. This Si-a-C:H interface layer was deposited by rf plasma deposition from tetramethylsilane. Then a-C:H films containing Si-O with a varying silicon content were produced from a mixture of acetylene and hexamethyldisiloxane. The structural changes upon annealing of these films were investigated using Raman spectroscopy. The analysis of the development of the different peaks upon annealing temperature reveals the transition from the amorphous structure to the more graphitic-like structure. This transition temperature increases by as much as 100°C when silicon is incorporated into the DLC film. However, when Si-O is incorporated instead of only silicon the same increase in temperature stability is observed.

Diamond-like carbon films prepared by rf plasma deposition

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 1360-1363 ◽  
Author(s):  
X.-D. Pan ◽  
E.A. Maydell ◽  
R.H. Milne ◽  
D.J. Fabian
Keyword(s):  
Plasma Deposition ◽  
Carbon Films ◽  
Rf Plasma ◽  
Diamond Like Carbon

Substrate Effect on the Diamond-Like Carbon Films Synthesized by RF Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 3574-3579 ◽  
Author(s):  
S.S. Tzeng ◽  
Wei Min Wu ◽  
J.S. Hsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
The Self ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Working Pressure ◽  
Glass Substrates ◽  
Self Bias

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, and polymer-like carbon films were obtained at -157 V. For the alumina substrates, different Raman results were observed for flat-polished and mirror-polished alumina substrates. The hardness of DLC films, deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, was within 16~20 GPa using nanoindentation technique.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

Molecular Dynamics Study of Ion Impact Phenomena and Compressive Stress in Thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
N.A. Marks ◽  
P. Guan ◽  
D.R. Mckenzie ◽  
B.A. PailThorpe
Keyword(s):  
Molecular Dynamics ◽  
Three Dimensional ◽  
Carbon Films ◽  
Loss Mechanism ◽  
Ion Energy ◽  
Lennard Jones ◽  
Impact Phenomena ◽  
Ion Impact ◽  
Dynamics Simulations ◽  
The Impact

ABSTRACTMolecular dynamics simulations of nickel and carbon have been used to study the phenomena due to ion impact. The nickel and carbon interactions were described using the Lennard-Jones and Stillinger-Weber potentials respectively. The phenomena occurring after the impact of 100 e V to 1 keV ions were studied in the nickel simulations, which were both two and three-dimensional. Supersonic focussed collision sequences (or focusons) were observed, and associated with these focusons were unexpected sonic bow waves, which were a major energy loss mechanism for the focuson. A number of 2D carbon films were grown and the stress in the films as a function of incident ion energy was Measured. With increasing energy the stress changed from tensile to compressive and reached a maximum around 50 eV, in agreement with experiment.

RF Plasma Deposition of a-C:H Films: Diagnostics and Modeling

1991 ◽  
pp. 307-312 ◽  
Author(s):  
V. Barbarossa ◽  
O. Martini ◽  
S. Mercuri ◽  
R. Tomaciello ◽  
F. Galluzzi
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma

RF Plasma Deposition of YBa2Cu3O7−x Films

1990 ◽  
pp. 99-107
Author(s):  
S. Patel ◽  
A. Shah ◽  
D. T. Shaw
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma

Hard Carbon Films with Various Microstructure Prepared by Ion Assisted Evaporation

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
U. Falke
Keyword(s):  
Growth Mechanism ◽  
Film Growth ◽  
Carbon Films ◽  
Carbon Surface ◽  
Vickers Indentation ◽  
Structure Modification ◽  
Hard Carbon ◽  
Ion Etching ◽  
Ion Energy ◽  
Free Ion

ABSTRACTFor a deeper understanding of the creation of carbon films the hydrogen-free ion assisted evaporation (IAE) method with neon species was used. Variation of the ion parameters energy and ion to neutral arrival ratio, delivering the necessary energy for modification of the film growth, results in different microstructures investigated with EELS, HRTEM and TED as well as different microhardnesses measured by dynamical Vickers indentation. A possible film growth mechanism is proposed based on an ion etching of mainly sp2-bonded carbon surface atoms and on defect dominated structure modification below the surface depending on the ion energy

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