scholarly journals Dust Particle Diagnostics in Rf Plasma Deposition of Silicon and Silicon Oxide Films (Invited)

1998 ◽  
Vol 507 ◽  
Author(s):  
Ch. Hollenstein ◽  
A. A. Howling ◽  
C. Courteille ◽  
J.-L. Dorier ◽  
L. Sansonnens ◽  
...  
Keyword(s):  
Mass Spectra ◽  
Silicon Oxide ◽  
Plasma Deposition ◽  
Cluster Formation ◽  
Plasma Chemistry ◽  
Random Model ◽  
Rf Plasma ◽  
Particle Contamination ◽  
The Rich ◽  
Measured Mass

ABSTRACTParticle contamination formed in reactive plasmas imposes an upper limit on the rate for particle-free deposition. Conversely, these plasmas could be exploited to produce nanometric clusters and particles for various applications. Infrared absorption spectroscopy has been applied to analyse the chemical composition of suspended particles. Mass spectrometry was also used to investigate cluster formation in these deposition plasmas. In pure silane plasmas, a random model reproduces the measured mass spectra, whereas the rich plasma chemistry in silane/oxygen mixtures shows a remarkable tendency to produce silasesquioxane anions.

RF Plasma Deposition of a-C:H Films: Diagnostics and Modeling

1991 ◽  
pp. 307-312 ◽  
Author(s):  
V. Barbarossa ◽  
O. Martini ◽  
S. Mercuri ◽  
R. Tomaciello ◽  
F. Galluzzi
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma

RF Plasma Deposition of YBa2Cu3O7−x Films

1990 ◽  
pp. 99-107
Author(s):  
S. Patel ◽  
A. Shah ◽  
D. T. Shaw
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma

RF plasma deposition of SiO2-like films: plasma phase diagnostics and gas barrier film properties optimisation

2001 ◽  
Vol 142-144 ◽  
pp. 163-168 ◽  
Author(s):  
Mariadriana Creatore ◽  
Fabio Palumbo ◽  
Riccardo d'Agostino ◽  
Pierre Fayet
Keyword(s):  
Plasma Deposition ◽  
Rf Plasma ◽  
Film Properties ◽  
Gas Barrier ◽  
Plasma Phase ◽  
Barrier Film

Effect of RF plasma deposition parameters on Y1Ba2Cu3O7−x thin films

1991 ◽  
Author(s):  
A. Shah ◽  
E. Narumi ◽  
J. Schutkeker ◽  
S. Patel ◽  
D. T. Shaw
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Rf Plasma ◽  
Deposition Parameters

Structural Stability of Si-O-a-C:H/Si-a-C:H Layered Systems

1996 ◽  
Vol 434 ◽  
Author(s):  
U. Müller ◽  
R. Hauert
Keyword(s):  
Structural Changes ◽  
Plasma Deposition ◽  
Temperature Stability ◽  
High Hardness ◽  
Interface Layer ◽  
Amorphous Structure ◽  
Carbon Films ◽  
Rf Plasma ◽  
Chemical Inertness ◽  
Amorphous Hydrogenated Carbon

AbstractAmorphous hydrogenated carbon films are of technological interest as protection coatings due to their special properties such as high hardness, chemical inertness, electrical insulation and infrared transparency. However, some applications still suffer from the poor thermal stability and adhesion problems of these coatings. To ensure good adhesion, especially on hardened steels and non-carbide forming substrates, an extra interlayer has to be deposited first. Often a silicon containing interlayer, Si-a-C:H for example, is used for this purpose. This Si-a-C:H interface layer was deposited by rf plasma deposition from tetramethylsilane. Then a-C:H films containing Si-O with a varying silicon content were produced from a mixture of acetylene and hexamethyldisiloxane. The structural changes upon annealing of these films were investigated using Raman spectroscopy. The analysis of the development of the different peaks upon annealing temperature reveals the transition from the amorphous structure to the more graphitic-like structure. This transition temperature increases by as much as 100°C when silicon is incorporated into the DLC film. However, when Si-O is incorporated instead of only silicon the same increase in temperature stability is observed.

Cluster Formation by Laser Ablation of Zeolites

1996 ◽  
Vol 457 ◽  
Author(s):  
Hiroshi T. Komiyama ◽  
Azuchi Harano ◽  
Tatsuya Okubo ◽  
Masayoshi Sadakata
Keyword(s):  
Mass Spectrometry ◽  
Laser Ablation ◽  
Quartz Glass ◽  
Nd:Yag Laser ◽  
Ultrafine Particles ◽  
Mass Spectra ◽  
Cluster Formation ◽  
Flight Mass Spectrometry ◽  
Positive Ions ◽  
Tof Ms

ABSTRACTSeveral kinds of zeolites, crystal-SiO2 (α-quartz), arnorphous-SiO2 (quartz glass and ultrafine particles) and α-Al2O3, were ablated by an Nd:YAG laser. Generated positive ions from the targets were measured by TOF-MS (time-of-flight mass spectrometry). In the TOF mass spectra of ablated zeolites, TOx (x=0–2, T = tetrahedral atom, e.g., Si, Al), T2Ox (x=1) and T3Ox (x=4,5) were observed up to m/z=170 (m = mass, z = plus charge of clusters). In the spectra due to the oc-quartz, quartz glass and an α-Al2O3 plate, smaller species, T+, TO+ and TO2+, were mainly detected. These results demonstrate that the clusters from zeolites reflect the characters of the mother structure.

The Formation and Behavior of Particles in Silane Discharges

1999 ◽  
Vol 557 ◽  
Author(s):  
Alan Gallagher
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Particle Density ◽  
Plasma Chemistry ◽  
Particle Growth ◽  
Rf Plasma ◽  
Electrode Gap ◽  
Plasma Parameters ◽  
Rf Discharges ◽  
And Behavior

AbstractParticle growth in silane RF discharges, and the incorporation of particles into hydrogenated-amorphous-silicon (a-Si:H) devices is described. These particles have a structure similar to a-Si:H, but their incorporation into the device is believed to yield harmful voids and interfaces. Measurements of particle density and growth in a silane RF plasma, for particle diameters of 8-50 nm, are described. This particle growth rate is very rapid, and decreases in density during the growth indicate a major flux of these size particles to the substrate. Particle densities are a very strong function of pressure, film growth rate and electrode gap, increasing orders of magnitude for small increases in each parameter. A full plasma- chemistry model for particle growth from SiHm radicals and ions has been developed, and is outlined. It yields particle densities and growth rates, as a function of plasma parameters, which are in qualitative agreement with the data. It also indicates that, in addition to the diameter >2 nm particles that have been observed in films, a very large flux of SixH,, molecular radicals with × >1 also incorporate into the film. It appears that these large radicals yield more than 1% of the film for typical device-deposition conditions, so this may have a serious effect on device properties.

Control of stress and delamination in single and multi-layer carbon thin films prepared by cathodic arc and RF plasma deposition and implantation

2006 ◽  
Vol 200 (22-23) ◽  
pp. 6405-6408 ◽  
Author(s):  
Peter C.T. Ha ◽  
D.R. McKenzie ◽  
M.M.M. Bilek ◽  
E.D. Doyle ◽  
D.G. McCulloch ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Rf Plasma ◽  
Carbon Thin Films ◽  
Cathodic Arc

Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Plasma Chemistry ◽  
High Growth ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
High Growth Rate ◽  
Film Deposition ◽  
Dual Mode

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

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