Pressure Dependence of X-Ray Yields in Protonium

Author(s):  
E. Borie
Keyword(s):  
1997 ◽  
Vol 34 (6) ◽  
pp. 875-882 ◽  
Author(s):  
Tara L. Hicks ◽  
Richard A. Secco

The dehydration and decomposition of South African pyrophyllite were studied in the pressure range 2.5–5.0 GPa and in the temperature (T) range 295–1473 K using both in situ electrical conductivity measurements and X-ray diffraction studies on the recovered samples. Activation energies for conduction (Qc) vary in the range 0.02–0.07 eV for T ≤ 500 K where the dominant conduction mode is electronic, and Qc is in the range 1.10–1.28 eV for T ≥ 500 K where ionic conduction dominates. Abrupt changes in the isobaric temperature dependence of conductivity mark the onset of dehydration and subsequent decomposition into kyanite plus quartz–coesite. At 2.5 GPa, South African pyrophyllite forms the dehydroxylate phase at 760 K with a pressure dependence of ~30 K/GPa and complete decomposition follows at 1080 K with a pressure dependence of ~41 K/GPa. The resulting pressure–temperature phase diagram is in very good agreement with many previous studies at 1 atm (101.325 kPa).


Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 643 ◽  
Author(s):  
Javier Gonzalez-Platas ◽  
Placida Rodriguez-Hernandez ◽  
Alfonso Muñoz ◽  
U. R. Rodríguez-Mendoza ◽  
Gwilherm Nénert ◽  
...  

Synthetic chalcomenite-type cupric selenite CuSeO3∙2H2O has been studied at room temperature under compression up to pressures of 8 GPa by means of single-crystal X-ray diffraction, Raman spectroscopy, and density-functional theory. According to X-ray diffraction, the orthorhombic phase undergoes an isostructural phase transition at 4.0(5) GPa with the thermodynamic character being first-order. This conclusion is supported by Raman spectroscopy studies that have detected the phase transition at 4.5(2) GPa and by the first-principles computing simulations. The structure solution at different pressures has provided information on the change with pressure of unit–cell parameters as well as on the bond and polyhedral compressibility. A Birch–Murnaghan equation of state has been fitted to the unit–cell volume data. We found that chalcomenite is highly compressible with a bulk modulus of 42–49 GPa. The possible mechanism driving changes in the crystal structure is discussed, being the behavior of CuSeO3∙2H2O mainly dominated by the large compressibility of the coordination polyhedron of Cu. On top of that, an assignation of Raman modes is proposed based upon density-functional theory and the pressure dependence of Raman modes discussed. Finally, the pressure dependence of phonon frequencies experimentally determined is also reported.


2003 ◽  
Vol 93 (6) ◽  
pp. 3218-3222 ◽  
Author(s):  
Avijit Chowdhury ◽  
V. Arora ◽  
P. A Naik ◽  
P. D. Gupta

1991 ◽  
Vol 236 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang

AbstractSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.


1991 ◽  
Vol 235 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang

ABSTRACTSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.


1997 ◽  
Vol 36 (24) ◽  
pp. 5580-5588 ◽  
Author(s):  
Cécile Hannay ◽  
Marie-Jeanne Hubin-Franskin ◽  
Fernande Grandjean ◽  
Valérie Briois ◽  
Alain Polian ◽  
...  

2011 ◽  
Vol 21 (3) ◽  
pp. 245
Author(s):  
Ho Khac Hieu ◽  
Vu Van Hung ◽  
Nguyen Van Hung

Pressure dependence of Extended X-ray Absorption Fine Structure (EXAFS) cumulants of silicon and germanium have been investigated using the statistical moment method (SMM). Analytical expressions of the first and second cumulants of silicon and germanium have been derived. The equations of states for silicon and germanium semiconductors have been also obtained using which the pressure dependence of lattice constants and volume of these semiconductors have been estimated. Numerical results using the developed theories for these semiconductors are found to be in good and reasonable agreement with those of the other theories and with experiment.


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