Mos Tunneling Rate and Interface State Capture Cross-Section

1988 ◽  
pp. 373-380
Author(s):  
Walter E. Dahlke ◽  
Sanjay Jain
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Interface State ◽  
Tunneling Rate ◽  
Capture Cross ◽  
State Capture

Interface-state capture cross section—Why does it vary so much?

2015 ◽  
Vol 106 (16) ◽  
pp. 163503 ◽  
Author(s):  
J. T. Ryan ◽  
A. Matsuda ◽  
J. P. Campbell ◽  
K. P. Cheung
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Interface State ◽  
Capture Cross ◽  
State Capture

Interface State Capture Cross Section Measurements on Vacuum Annealed and Radiation Damaged Si : SiO2 Surfaces

1998 ◽  
Vol 145 (2) ◽  
pp. 683-689 ◽  
Author(s):  
M. J. Uren ◽  
V. Nayar ◽  
K. M. Brunson ◽  
C. J. Anthony ◽  
J. H. Stathis ◽  
...  
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Interface State ◽  
Capture Cross ◽  
State Capture

Role of Interface-States in the Reverse Bias Aging of GaAs Schottky Barriers

1990 ◽  
Vol 184 ◽  
Author(s):  
K. A. Christianson
Keyword(s):  
Cross Section ◽  
Aging Process ◽  
Reverse Bias ◽  
Capture Cross Section ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Barriers ◽  
Capture Cross ◽  
State Generation ◽  
Thermionic Field Emission

ABSTRACTForward bias capacitance has been used to examine the Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers present in power microwave MESFET devices to see if interface-state generation plays any role in the previously reported reverse bias barrier height aging process. If a constant carrier capture cross-section is assumed, forward bias capacitance has shown that for samples strongly susceptible to aging (i.e. the Au/W/GaAs samples in this study) interface-state generation is taking place during the aging process. The validity of the constant capture cross section assumption has been tested by examining the I–V properties. For those samples whose reverse I–V properties were not dominated by thermionic-field emission, similar increases in interface-state densities were evaluated from the I–V characteristics for the degraded samples.

scholarly journals Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Cross Section ◽  
Surface State ◽  
Hafnium Oxide ◽  
Capture Cross Section ◽  
Surface Recombination ◽  
Surface States ◽  
Interfacial Properties ◽  
Surface Recombination Velocity ◽  
Capture Cross ◽  
State Capture

The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

Role of Interface-States in the Reverse Bias Aging of Gaas Schottky Barriers

1990 ◽  
Vol 181 ◽  
Author(s):  
K. A. Christianson
Keyword(s):  
Cross Section ◽  
Aging Process ◽  
Reverse Bias ◽  
Capture Cross Section ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Barriers ◽  
Capture Cross ◽  
State Generation ◽  
Thermionic Field Emission

ABSTRACTForward bias capacitance has been used to examine the Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers present in power microwave MESFET devices to see if interface-state generation plays any role in the previously reported reverse bias barrier height aging process. If a constant carrier capture cross-section is assumed, forward bias capacitance has shown that for samples strongly susceptible to aging (i.e. the Au/W/GaAs samples in this study) interface-state generation is taking place during the aging process. The validity of the constant capture cross section assumption has been tested by examining the I-V properties. For those samples whose reverse I-V properties were not dominated by thermionic-field emission, similar increases in interface-state densities were evaluated from the I-V characteristics for the degraded samples.

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