Circuit Elements: Resistance, Capacitance, and Inductance

2022 ◽  
pp. 43-63
Author(s):  
Samuel H. Russ
Keyword(s):  
2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld

AbstractDuring copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially removing protective films. The local Cu oxidation rate increases, then decays with time as the protective film reforms. In order to estimate the copper removal rate and other Cu-CMP output parameters with a mechanistic model, the passivation kinetics of Cu, i.e. the decay of the oxidation current with time after an abrasive/copper interaction, are needed. For the first time in studying Cu-CMP, microelectrodes were used to reduce interference from capacitive charging, IR drops and low diffusion limited currents, problems typical with traditional macroelectrodes. Electrochemical impedance spectroscopy (EIS) was used to obtain the equivalent circuit elements associated with different electrochemical phenomena (capacitive, kinetics, diffusion etc.) at different polarization potentials. These circuit elements were used to interpret potential-step chronoamperometry results in inhibiting and passivating solutions, notably to distinguish between capacitive charging and Faradaic currents.Chronoamperometry of Cu in acidic aqueous glycine solution containing the corrosion inhibitor benzotriazole (BTA) displayed a very consistent current decay behavior at all potentials, indicating that the rate of current decay was controlled by diffusion of BTA to the surface. In basic aqueous glycine solution, Cu (which undergoes passivation by a mechanism similar to that operating in weakly acidic hydrogen peroxide slurries) displayed similar chronoamperometric behavior for the first second or so at all anodic potentials. Thereafter, the current densities at active potentials settled to values around those expected from polarization curves, whereas the current densities at passive potentials continued to decline. Oxidized Cu species typically formed at ‘active’ potentials were found to cause significant current decay at active potentials and at passive potentials before more protective passive films form. This was established from galvanostatic experiments.


Author(s):  
Eberechukwu Victoria Amadi ◽  
Anusha Venkataraman ◽  
Tristan Zaborniak ◽  
Chris Papadopoulos

Instruments ◽  
2018 ◽  
Vol 2 (3) ◽  
pp. 16 ◽  
Author(s):  
Ram Narayanan ◽  
Kyle Gallagher ◽  
Gregory Mazzaro ◽  
Anthony Martone ◽  
Kelly Sherbondy

Radio frequency (RF) circuit elements that are traditionally considered to be linear frequently exhibit nonlinear properties that affect the intended operation of many other RF systems. Devices such as RF connectors, antennas, attenuators, resistors, and dissimilar metal junctions generate nonlinear distortion that degrades primary RF system performance. The communications industry is greatly affected by these unintended and unexpected nonlinear distortions. The high transmit power and tight channel spacing of the communication channel makes communications very susceptible to nonlinear distortion. To minimize nonlinear distortion in RF systems, specialized circuits are required to measure the low level nonlinear distortions created from traditionally linear devices, i.e., connectors, cables, antennas, etc. Measuring the low-level nonlinear distortion is a difficult problem. The measurement system requires the use of high power probe signals and the capability to measure very weak nonlinear distortions. Measuring the weak nonlinear distortion becomes increasingly difficult in the presence of higher power probe signals, as the high power probe signal generates distortion products in the measurement system. This paper describes a circuit design architecture that achieves 175 dB of dynamic range which can be used to measure low level harmonic distortion from various passive RF circuit elements.


Complexity ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
Dalibor Biolek ◽  
Zdeněk Biolek ◽  
Viera Biolková

The duality of nonlinear systems built from higher-order two-terminal Chua’s elements and independent voltage and current sources is analyzed. Two different approaches are now being generalized for circuits with higher-order elements: the classical duality principle, hitherto restricted to circuits built from R-C-L elements, and Chua’s duality of memristive circuits. The so-called storeyed structure of fundamental elements is used as an integrating platform of both approaches. It is shown that the combination of associated flip-type and shift-type transformations of the circuit elements can generate dual networks with interesting features. The regularities of the duality can be used for modeling, hardware emulation, or synthesis of systems built from elements that are not commonly available, such as memristors, via classical dual elements.


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